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參數(shù)資料
| 型號(hào)： | SA57000-36D |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection |
| 中文描述： | 3.6 V FIXED POSITIVE LDO REGULATOR, 0.12 V DROPOUT, PDSO5 |
| 封裝： | 1.60 MM, PLASTIC, MO-178, SOT-680-1, SO-5 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 104K |
| 代理商： | SA57000-36D |
Philips Semiconductors
Product data
SA57000-XX
CapFREE
150 mA, low-noise, low dropout regulator
with thermal protection
2001 Aug 27
4
CHARACTERISTICS
V
IN
= V
OUT(nom)
+ 0.5 V. (Note 1.)
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
IN
input voltage
V
OUT(nom)
–
5.5
V
output voltage accuracy
2
I
OUT
= 1 mA
T
amb
= +25
°
C
–40
°
C
≤
T
amb
≤
+85
°
C
–
±
1
–
–
%
%
–2.0
2.0
I
LIM
current limit
160
300
–
mA
I
Q
ground pin current
I
OUT
= 1 mA to 150 mA
–
85
150
μ
A
dropout voltage
3
I
OUT
= 1 mA
–
1
–
mV
I
OUT
= 50 mA
–
55
120
mV
I
OUT
= 150 mA
–
165
–
mV
V
LNR
line regulation
V
IN
= (V
OUT
+ 0.1 V) to 5.5 V; I
OUT
= 20 mA
–
–
0.1
%/V
V
LDR
load regulation
I
OUT
= 1 mA to 150 mA
–
0.01
0.02
%/mA
e
n
output voltage noise
f = 10 Hz to 100 kHz, C
OUT
= 10
μ
F
–
30
–
μ
V
RMS
Shutdown
V
IH
PWRON input threshold
(HIGH ON-state)
V
IN
→
V
OUT(nom)
→
5.5 V
0.7
×
V
IN
–
–
V
V
IL
PWRON input threshold
(HIGH ON-state)
V
IN
→
V
OUT(nom)
→
5.5 V
–
–
0.3
×
V
IN
V
I
PWRON
PWRON input bias current
V
PWRON
= V
IN
T
amb
= +25
°
C
T
amb
= +85
°
C
–
–
0.01
0.05
1
–
μ
A
μ
A
I
Q(SHDN)
shutdown supply current
V
OUT
= 0 V
T
amb
= +25
°
C
T
amb
= +85
°
C
–
–
0.05
0.2
1
1
μ
A
μ
A
t
PWRON
power-on start-up time
4
I
OUT
= 1 mA, C
OUT
= 100 nF
T
amb
= +25
°
C
T
amb
= –40 to +85
°
C
–
–
25
35
100
200
μ
s
μ
s
Thermal protection (Note 2)
T
SHDN
thermal shut-down temperature
–
144
–
°
C
T
SHDN
thermal shut-down hysteresis
–
13
–
°
C
PWROK output (power and temperature OK) (Note 2)
PWROK trip temperature
–
127
–
°
C
PWROK trip temperature
hysteresis
–
12
–
°
C
PWROK trip as percentage of
V
OUT(nom)
–3.5
–6
–8
%
PWROK hysteresis as
percentage of V
OUT(nom)
–
2
–
%
PWROK output (when tripped)
I
SINK
= 0.5 mA
–
0.1
0.4
V
NOTES:
1. Limits are production tested at T
amb
= +25
°
C. All devices are 100% production tested at 25
°
C. Limits over the operating tempreature are
guaranteed by design.
2. Accuracy
±
2
°
C over temperature range guaranteed by design and characterization.
3. The dropout voltage is defined as V
– V
OUT,
where V
OUT
is 100 mV below the value of V
OUT
for V
IN
= V
OUT
+ 0.5 V..
4. Time needed for V
OUT
to reach 95% of V
OUT(nom)
.
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