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參數資料
| 型號： | SA57000-36D |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection |
| 中文描述： | 3.6 V FIXED POSITIVE LDO REGULATOR, 0.12 V DROPOUT, PDSO5 |
| 封裝： | 1.60 MM, PLASTIC, MO-178, SOT-680-1, SO-5 |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 104K |
| 代理商： | SA57000-36D |
Philips Semiconductors
Product data
SA57000-XX
CapFREE
150 mA, low-noise, low dropout regulator
with thermal protection
2001 Aug 27
3
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
TEMPERATURE
RANGE
NAME
DESCRIPTION
VERSION
SA57000-
XX
D
SOT23-5,
SOT25, SO5
plastic small outline package; 5 leads (see dimensional drawing)
SOT680-1
–40 to +85
°
C
NOTE:
The device has five voltage output options, indicated by the
XX
on
the Type Number.
XX
VOLTAGE (Typical)
25
2.5 V
28
2.8 V
30
3.0 V
33
3.3 V
36
3.6 V
Part number marking
Each package is marked with a four letter code. The first three
letters designate the product. The fourth letter, represented by ‘x’, is
a date tracking code.
Part number
Marking
SA57000-25D
A B K x
SA57000-28D
A B L x
SA57000-30D
A B M x
SA57000-33D
A B N x
SA57000-36D
A B P x
PIN CONFIGURATION
SA00556
1
2
3
4
5
V
OUT
PWROK
PWRON
GND
V
IN
S
Figure 2. Pin configuration.
PIN DESCRIPTION
PIN
SYMBOL
DESCRIPTION
1
V
IN
Regulator input. V
OUT(nom)
+ 0.1 V to 5.5 V.
No bypass capacitor required.
2
GND
Ground.
3
PWRON
Power-on input. Active-HIGH. A logic LOW
powers down regulator. The shutdown
quiescent current is typically 50 nA.
Connect to V
IN
for manual operation.
Power OK indicator, including thermal
warning. Trips (goes LOW) at 127
°
C (
±
2
°
),
or
when power falls typically 6% below
V
OUT(nom)
.
Regulator output. Sources up to 150 mA.
No bypass capacitors required.
4
PWROK
5
V
OUT
MAXIMUM RATINGS
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
IN
V
IN
to GND voltage
–0.3
5.5
V
dc
V
PWRON
PWRON to GND voltage
–0.3
5.5
V
dc
V
OUT
OUT to GND voltage
–0.3
V
IN
+ 0.3
V
dc
T
amb
Operating ambient temperature
–40
+85
°
C
T
j
Junction temperature
–
+150
°
C
T
stg
Storage temperature
–65
+160
°
C
P
Power dissipation
–
575
mW
R
th(j-a)
Thermal resistance from junction to ambient
–
140
°
C/W
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