參數(shù)資料
型號(hào)： SA5212AD
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 通信及網(wǎng)絡(luò)
英文描述： Transimpedance amplifier 140MHz
中文描述： SPECIALTY TELECOM CIRCUIT, PDSO8
封裝： PLASTIC, SO-8
文件頁(yè)數(shù)： 12/20頁(yè)
文件大?。?/td> 186K
代理商： SA5212AD
Philips Semiconductors
Product specification
SA5212A
Transimpedance amplifier (140MHz)
1998 Oct 07
12
INPUT
OUT–
OUT+
PHOTODIODE
VB2
+
+
R
1
R
3
R
12
R
13
R
5
R
4
R
7
R
14
R
15
Q
1
Q
3
Q
2
Q
4
Q
15
Q
16
Q
11
Q
12
GND
2
GND
1
V
CC2
V
CC1
R
2
SD00328
Figure 11. Transimpedance Amplifier
V
CC
V
EQ3
V
IN
I
IN
INPUT
I
F
I
B
Q1
Q2
Q3
R2
R3
R4
R
F
R1
I
C1
SD00329
Figure 12. Shunt-Series Input Stage
DYNAMIC RANGE
The electrical dynamic range can be defined as the ratio of
maximum input current to the peak noise current:
Electrical dynamic range, D
E
, in a 200MHz bandwidth assuming
I
INMAX
= 120
μ
A and a wideband noise of I
EQ
=52nA
RMS
for an
external source capacitance of C
S
= 1pF.
(Max. input current)
(Peak noise current)
D
E
D
E
(dB)
20log(120
10
6
)
( 2 52nA)
D
E
(dB)
20log((73nA)
64dB
In order to calculate the optical dynamic range the incident optical
power must be considered.
For a given wavelength
λ
;
Energy of one Photon = hc watt sec (Joule)
Where h=Planck’s Constant = 6.6
×
10
-34
Joule sec.
c = speed of light = 3
×
10
8
m/sec
c /
λ
= optical frequency
No. of incident photons/sec= where P=optical incident power
No. of incident photons/sec =
P
hc
where P = optical incident power
No. of generated electrons/sec =
P
hc
where
η
= quantum efficiency
no. of generated electron hole paris
no. of incident photons
P
hc
e Amps (Coulombs sec.)
where e = electron charge = 1.6
×
10
-19
Coulombs
e
hc Amp/watt
I
Responsivity R =
I
P
R
Assuming a data rate of 400 Mbaud (Bandwidth, B=200MHz), the
noise parameter Z may be calculated as:
1
I
EQ
qB
(1.6
10
10
6
)
Z
52
10
9
19
)(200
1625
Amp
Amp
where Z is the ratio of
RMS
noise output to the peak response to a
single hole-electron pair. Assuming 100% photodetector quantum
efficiency, half mark/half space digital transmission, 850nm
lightwave and using Gaussian approximation, the minimum required
optical power to achieve 10
-9
BER is:
P
avMIN
12hcB Z
12 (2.3
10
19
)
200
10
6
1625
897nW
30.5dBm,
where h is Planck’s Constant, c is the speed of light,
λ
is the
wavelength. The minimum input current to the SA5212A, at this
input power is:
I
avMIN
qP
avMIN
hc
897
10
2.3
9
1.6
10
10
19
19
= 624nA
相關(guān)PDF資料
PDF描述
SA5212AFE Transimpedance amplifier 140MHz
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SA5212AD,602 功能描述:跨阻抗放大器 FIBER OPTIC TRANSIMPEDANCE RoHS:否 制造商:Texas Instruments 封裝 / 箱體:SOIC-14 帶寬:3 MHz 工作電源電壓:36 V 電源電流:5.5 mA 工作溫度范圍:- 40 C to + 85 C 封裝:Tube
SA5212AD,623 功能描述:跨阻抗放大器 FIBER OPTIC TRANSIMPEDANCE RoHS:否 制造商:Texas Instruments 封裝 / 箱體:SOIC-14 帶寬:3 MHz 工作電源電壓:36 V 電源電流:5.5 mA 工作溫度范圍:- 40 C to + 85 C 封裝:Tube
SA5212AD/01 功能描述:特殊用途放大器 FIBRE OPTIC TRANSIMPEDANCE AMP RoHS:否 制造商:Texas Instruments 通道數(shù)量:Single 共模抑制比（最小值）: 輸入補(bǔ)償電壓: 工作電源電壓:3 V to 5.5 V 電源電流:5 mA 最大功率耗散: 最大工作溫度:+ 70 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-20 封裝:Reel
SA5212AD/01,112 功能描述:跨阻抗放大器 FIBRE OPTIC RoHS:否 制造商:Texas Instruments 封裝 / 箱體:SOIC-14 帶寬:3 MHz 工作電源電壓:36 V 電源電流:5.5 mA 工作溫度范圍:- 40 C to + 85 C 封裝:Tube
SA5212AD/01,118 功能描述:跨阻抗放大器 FIBRE OPTIC RoHS:否 制造商:Texas Instruments 封裝 / 箱體:SOIC-14 帶寬:3 MHz 工作電源電壓:36 V 電源電流:5.5 mA 工作溫度范圍:- 40 C to + 85 C 封裝:Tube
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