參數(shù)資料
型號(hào): SA5209D
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: Wideband variable gain amplifier
中文描述: 0 MHz - 850 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
文件頁(yè)數(shù): 12/17頁(yè)
文件大?。?/td> 202K
代理商: SA5209D
Philips Semiconductors
Product specification
SA5209
Wideband variable gain amplifier
1997 Nov 07
12
S
1
0
1
1
1
1
Frequency (MHz)
–10
–20
–30
–40
–50
–60
–70
–80
–90
T = 25
°
C
R
S
= R
L
= 50
R
=
50
See test-setup 1
SR00263
Figure 27. Reverse Isolation vs Frequency
P
0
0.2
1
0
0.4
0.6
0.8
–5
–10
–15
–20
–25
–30
V
AGC
(V)
OUTPUT
INPUT
T = 25
°
C
R
S
= R
L
= 50
R
=
50
f = 100MHz
See test-setup 1
SR00265
Figure 28. 1dB Gain Compression vs V
AGC
I
0
0.2
0.4
0.6
0.8
15
10
5
0
–5
1
T = 25
°
C
R
S
= R
L
= 50
R
= 50
f = 100MHz
See test-setup 1
V
AGC
(V)
OUTPUT
INPUT
3
SR00264
Figure 29. Third-Order Intermodulation Intercept vs V
AGC
N
0
0.2
1
20
V
AGC
(V)
T = 25
°
C
R
S
= R
L
= 50
R
=
f = 50MHz
See test-setup 1
0.4
0.6
0.8
18
16
14
12
10
8
6
4
2
0
SR00266
Figure 30. Noise Figure vs V
AGC
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