參數(shù)資料
型號: SA5204AN
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: RES 110 OHM 1/10W .5% 0805 SMD
中文描述: 0 MHz - 350 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
文件頁數(shù): 4/14頁
文件大?。?/td> 190K
代理商: SA5204AN
Philips Semiconductors
Product specification
NE/SA5204A
Wide-band high-frequency amplifier
1992 Feb 25
4
DC ELECTRICAL CHARACTERISTICS
V
CC
=6V, Z
S
=Z
L
=Z
O
=50
and T
A
=25
°
C
,
in all packages, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
Typ
UNIT
Min
Max
V
CC
I
CC
S21
Operating supply voltage range
Over temperature
5
8
V
Supply current
Over temperature
19
25
33
mA
Insertion gain
f=100MHz, over temperature
16
19
22
dB
S11
Input return loss
f=100MHz
25
dB
DC –550MHz
12
S22
Output return loss
f=100MHz
27
dB
DC –550MHz
12
S12
Isolation
f=100MHz
–25
dB
DC –550MHz
±
0.5dB
–3dB
–18
BW
Bandwidth
200
350
MHz
BW
Bandwidth
Noise figure (75
)
Noise figure (50
)
Saturated output power
350
550
MHz
f=100MHz
4.8
dB
f=100MHz
6.0
dB
f=100MHz
+7.0
dBm
1dB gain compression
f=100MHz
+4.0
dBm
Third–order intermodulation inter-
cept (output)
f=100MHz
+17
dBm
Second–order intermodulation inter-
cept (output)
f=100MHz
+24
dBm
t
R
t
P
Rise time
500
ps
Propagation delay
500
ps
S
35
34
32
30
28
26
24
22
20
18
16
5
5.5
6
6.5
7
7.5
8
SUPPLY VOLTAGE—V
T
A
= 25
o
C
SR00195
Figure 3. Supply Current vs Supply Voltage
N
v
cc
= 6v
v
cc
= 5v
v
cc
= 8v
v
cc
= 7v
9
8
7
6
5
Z
O
= 50
T
A
= 25
o
C
FREQUENCY—MHz
10
1
2
4
6
8
2
4
6
8
10
2
10
3
SR00196
Figure 4. Noise Figure vs Frequency
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