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參數(shù)資料
| 型號： | S949TR |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Miniature Enclosed Switches Series 914CE: Top Roller Plunger; 1NC 1NO SPDT Snap Action; 4-Pin DC Micro-Connector |
| 中文描述： | MOSMIC的電視調(diào)諧器，9 V電源電壓前置 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 194K |
| 代理商： | S949TR |
S949T/S949TR/S949TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
4 (9)
Rev. 3, 20-Jan-99
Document Number 85061
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
0
25
T
amb
– Ambient Temperature (
°
C )
50
75
100
0
50
100
150
200
250
P
t
150
95 10783
125
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
2
4
6
8
0
4
8
12
16
20
I
D
V
DS
– Drain Source Voltage ( V )
95 11150
1
3
5
7
9
V
G2S
=5V
2V
1V
3V
1.5V
4V
Figure 2. Drain Current vs. Drain Source Voltage
0
1
2
3
4
0
4
8
12
16
20
I
D
V
G2S
– Gate 2 Source Voltage ( V )
95 11151
V
DS
=9V
Figure 3. Drain Current vs. Gate 2 Source Voltage
0
10
20
30
40
95 11152
0
1
2
3
4
V
G2S
– Gate 2 Source Voltage ( V )
V
DS
=9V
f=200MHz
y
2
Figure 4. Forward Transadmittance vs.
Gate 2 Source Voltage
C
i
95 11153
0
1
2
3
4
0
1
2
3
4
V
G2S
– Gate 2 Source Voltage ( V )
6
5
V
DS
=9V
f=200MHz
Figure 5. Gate 1 Input Capacitance vs.
Gate 2 Source Voltage
3
5
7
9
0
0.5
1
1.5
2
C
o
V
DS
– Drain Source Voltage ( V )
11
95 11154
V
G2S
=4V
f=200MHz
Figure 6. Output Capacitance vs. Drain Source Voltage
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