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參數(shù)資料
| 型號(hào)： | S949TR |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Miniature Enclosed Switches Series 914CE: Top Roller Plunger; 1NC 1NO SPDT Snap Action; 4-Pin DC Micro-Connector |
| 中文描述： | MOSMIC的電視調(diào)諧器，9 V電源電壓前置 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 194K |
| 代理商： | S949TR |
S949T/S949TR/S949TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
2 (9)
Rev. 3, 20-Jan-99
Document Number 85061
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Symbol
V
DS
I
D
±
I
G1/G2SM
±
V
G1/G2SM
P
tot
T
Ch
T
stg
Value
12
30
10
6
200
150
Unit
V
mA
mA
V
mW
C
C
T
amb
≤
60 C
–55 to +150
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Channel ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 m Cu
Test Conditions
Symbol
R
thChA
Value
450
Unit
K/W
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain current
Self-biased
operating current
Gate 2 - source
cut-off voltage
Test Conditions
Symbol
±
V
(BR)G1SS
Min
7
Typ
Max Unit
10
±
I
G1S
= 10 mA, V
G2S
= V
DS
= 0
V
±
I
G2S
= 10 mA, V
G1S
= V
DS
= 0
±
V
(BR)G2SS
7
10
V
+V
G1S
= 5 V, V
G2S
= V
DS
= 0
–V
G1S
= 5 V, V
G2S
= V
DS
= 0
±
V
G2S
= 5 V, V
G1S
= V
DS
= 0
+I
G1SS
–I
G1SS
±
I
G2SS
50
100
20
A
A
nA
V
DS
= 9 V, V
G1S
= 0, V
G2S
= 4 V
V
DS
= 9 V, V
G1S
= nc, V
G2S
= 4 V
I
DSS
I
DSP
50
8
500
16
A
12
mA
V
DS
= 9 V, V
G1S
= nc, I
D
= 100 A
V
G2S(OFF)
1.0
V
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with V
G1S
< 0.7 V is feasible.
Using open collector switching transistor (inside of PLL), insert 10 k collector resistor.
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