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參數(shù)資料
| 型號： | S8986 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 100; rf (ohm) max: 1.1; Condition IF at rf (mA): 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.35; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: MP6 |
| 中文描述： | 防治荒漠化領(lǐng)域的圖像傳感器前端照明傅里葉變換的CCD用于X射線成像 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 173K |
| 代理商： | S8986 |
CCD area image sensor
S8986, S10128
2
I
Absolute maximum ratings (Ta=25 °C)
Parameter
Storage temperature
Operating temperature
OD voltage
RD voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Vcc voltage
Symbol
Tstg
Topr
V
OD
V
RD
V
SG
V
OG
V
RG
V
TG
V
P1V
, V
P2V
V
P1H
, V
P2H
Vcc
Min.
-20
0
-0.5
-0.5
-15
-15
-15
-15
-15
-15
0
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
+70
+40
+20
+18
+15
+15
+15
+15
+15
+15
+7
Unit
°C
°C
V
V
V
V
V
V
V
V
V
I
Operating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Substrate voltage
Vertical shift register
clock voltage
Horizontal shift register
clock voltage
Symbol
V
OD
V
RD
V
OG
Vss
V
P1VH
, V
P2VH
V
P1VL
, V
P2VL
V
P1HH
, V
P2HH
V
P1HL
, V
P2HL
Vs
GH
Vs
GL
V
RGH
V
RGL
V
TGH
V
TGL
Vcc
Min.
12
12
-0.5
-
0
-9
0
-9
0
-9
0
-9
0
-9
4.75
Typ.
15
13
2
0
3
-8
3
-8
3
-8
3
-8
3
-8
5
Max.
-
14
5
-
6
-7
6
-7
6
-7
6
-7
6
-7
5.25
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
High
Low
High
Low
High
Low
High
Low
High
Low
Summing gate voltage
Reset gate voltage
Transfer gate voltage
+5 V power supply voltage
I
Electrical characteristics (Ta=25 °C)
Parameter
Signal output frequency
Vertical shift register capacitance
Horizontal shift
register capacitance
Symbol
fc
C
P1
v, C
P2
v
Remark
Min.
-
-
-
-
-
-
-
-
-
-
0.99995
5
-
-
-
-
Typ.
1
70,000
400
600
20
220
20
220
250
450
0.99998
8
500
75
1
2
Max.
5
-
-
-
-
-
-
-
-
-
-
11
-
-
-
-
Unit
MHz
pF
*
1
S8986
S10128
S8986
S10128
S8986
S10128
S8986
S10128
C
P1H
, C
P2H
pF
Summing gate capacitance
Cs
G
pF
Reset gate capacitance
C
RG
pF
Transfer gate capacitance
C
TG
pF
Charge transfer efficiency
DC output level
Output impedance
Power dissipation
CTE
V
O
ut
Zo
P
*
2
*
3
*
3
*
3
*
4
-
V
mW
S8986
S10128
+5 V power supply current
Icc
mA
*1: S8986 only. In case of S10128, maximum frequency is strongly depend on peripheral circuit and cable length.
*2: Measured at half of the full well capacity. CTE is defined per pixel.
*3: V
OD
=15 V
*4: Power dissipation of the on-chip amplifier.
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