參數(shù)資料
型號: S8844-0909
廠商: Hamamatsu Photonics
英文描述: CCD area image sensor 512 】 512 pixels, Back-thinned FFT-CCD
中文描述: 防治荒漠化領(lǐng)域的圖像傳感器512】512像素,背減薄FFT的,防治荒漠化公約
文件頁數(shù): 1/9頁
文件大?。?/td> 176K
代理商: S8844-0909
S8844-0909
512 × 512 pixels, Back-thinned FFT-CCD
S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for
detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and
low dark current when operated in MPP (Multi Pinned-Phase) mode. Spectral response characteristics are very stable making high-precision
photometry possible.
A one-stage thermoelectric cooler is built into the package along with the CCD chip. The CCD operating temperature can be maintained at -10 C
when used at room temperature (25 C). S8844-0909 is identical performance and pin compatible with S7171-0909. S8844-0909 has wider FOV
(Field of View) than S7171-0909 because of window structure.
Features
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Number of active pixels: 512 × 512
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Greater than 90 % quantum efficiency at peak sensitivity
wavelength
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Wide spectral response range
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Low noise
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Wide dynamic range
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MPP operation
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Built-in one-stage thermoelectric cooler
Applications
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Scientific measurement
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Semiconductor inspection
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UV imaging
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Bio-photon observation
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DNA sequencer
I M A G E S E N S O R
CCD area image sensor
1
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Specifications
Type No.
Cooling
Number of total pixels
Number of active
pixels
Active area
[mm (H) × mm (V)]
S8844-0909
One-stage
TE-cooled
532 × 520
512 × 512
12.288 × 12.288
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General ratings
Parameter
Specifications
24 (H) × 24 (V) μm
512 (H) × 512 (V)
2 phase
2 phase
One-stage MOSFET source follower
24 pin ceramic DIP (refer to dimensional outlines)
One-stage
AR coated sapphire glass *
1
Pixel size
Number of active pixels
Vertical clock phase
Horizontal clock phase
Output circuit
Package
Built-in cooler
Window
*1: Windowless type is available on custom order.
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