- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄373356 > S8865-256G (Hamamatsu Photonics) Photodiode array combined with signal processing circuit chip PDF資料下載
參數(shù)資料
| 型號(hào)： | S8865-256G |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Photodiode array combined with signal processing circuit chip |
| 中文描述： | 光電二極管陣列結(jié)合信號(hào)處理集成電路芯片 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 100K |
| 代理商： | S8865-256G |
Features
Applications
P H O T O D I O D E
Photodiode array with amplifier
S8865-256, S8865-256G
Photodiode array combined with signal processing circuit chip
S8865-256 and S8865-256G are Si photodiode arrays combined with a signal processing circuit chip. The signal processing circuit chip is formed
by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external
circuit configuration simple. A long, narrow image sensor can also be configured by arranging multiple arrays in a row. For X-ray detection
applications, types with fluorescent paper affixed on the active area are also available.
l
Element pitch: 0.2 mm pitch × 256 ch
l
5 V power supply operation
l
Simultaneous integration by using a charge amplifier
array
l
Sequential readout with a shift register
(Data rate: 1 MHz Max.)
l
Low dark current due to zero-bias photodiode
operation
l
Integrated clamp circuit allows low noise and wide
dynamic range
l
Integrated timing generator allows operation at two
different input pulse timings (reset, clock)
l
Types with phosphor screen affixed on the active area are
available for X-ray detection: S8865-256G
l
Long line sensors
l
Line sensors for X-ray detection
I
Specifications of active area
Parameter
Element pitch
Element width
Element height
Number of elements
Active area length
*1: Refer to following figure.
Symbol *
1
P
W
H
-
-
Value
0.2
0.1
0.3
256
51.2
Unit
mm
mm
mm
-
mm
H
W
P
PHOTODIODE
I
Enlarged view of active area
KMPDC0072EB
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S8865 | Photodiode array combined with signal processing circuit chip |
| S8865-128 | Diode; High speed switching; VR (V): 75; IF (mA): -; Pd (mW): -; rf (ohm) max: -; Condition IF at rf (mA): -; Condition f at rf (MHz): -; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 4; Condition VR at C (V): 0; Condition f at C (MHz): 1; Package: MHD |
| S8865-64 | Photodiode array combined with signal processing circuit chip |
| S8890 | Long wavelength type APD |
| S8890-02 | Long wavelength type APD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S8865-64 | 制造商:HAMAMATSU 制造商全稱(chēng):Hamamatsu Corporation 功能描述:Photodiode array combined with signal processing circuit chip |
| S8865-64G | 制造商:HAMAMATSU 制造商全稱(chēng):Hamamatsu Corporation 功能描述:Photodiode array combined with signal processing IC for X-ray detection |
| S8866-128G-02 | 制造商:HAMAMATSU 制造商全稱(chēng):Hamamatsu Corporation 功能描述:Photodiode array combined with signal processing IC for X-ray detection |
| S8866-64_11 | 制造商:HAMAMATSU 制造商全稱(chēng):Hamamatsu Corporation 功能描述:Photodiode array combined with signal processing IC |
| S8866-64G-02 | 制造商:HAMAMATSU 制造商全稱(chēng):Hamamatsu Corporation 功能描述:Photodiode array combined with signal processing IC for X-ray detection |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。