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PHOTODIODE
Si photodiode with preamp
Photodiode and preamp integrated with feedback resistance and capacitance
S8745-01, S8746-01
S8745-01, S8746-01 are low-noise sensors consisting of Si photodiode, op amp, and feedback resistance and capacitance, all integrated into a
small package. By simply connecting to a power supply, S8745-01 and S8746-01 can be used in low-light-level measurement such as analytical
equipment and measurement equipment. The active area of the photodiode is internally connected to the GND terminal making it highly resistant
to EMC noise.
Features
Applications
l Si photodiode for UV to near IR precision photometry
l Small hermetic sealed package with quartz window
S8745-01: TO-5
S8746-01: TO-8
l Active area
S8745-01: 2.4 × 2.4 mm
S8746-01: 5.8 × 5.8 mm
l FET input operational amplifier with low power
dissipation
l Built-in Rf=1 G and Cf=5 pF
l Variable gain with an externally connected resistor
l Low noise and NEP
l Package with shielding effect
l Resistant to EMC noise
l Spectrophotometry
l General-purpose optical measurement
1
s Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
Value
Unit
Supply voltage (op amp)
Vcc
±20
V
Power dissipation
P
500
mW
Operating temperature
Topr
-20 to +60
°C
Storage temperature
Tstg
-30 to +80
°C
s Electrical and optical characteristics (Typ. Ta=25
°C, Vcc=±15 V, RL=1 M, unless otherwise noted)
Parameter
Symbol
Condition
S8745-01
S8746-01
Unit
Spectral response range
λ
190 to 1100
nm
Peak sensitivity wavelength
λp
960
nm
Feedback resistance (built-in)
Rf
1
G
Feedback capacitance (built-in)
Cf
5
pF
λ=200 nm
0.12
Photo sensitivity
S
λ=λp0.52
V/nW
Dark state f=10 Hz
6
7
Output noise voltage
Vn
Dark state, f=20 Hz
5
6
Vrms/Hz
1/2
λ=λp, f=10 Hz
11
15
Noise equivalent power
NEP
λ=λp, f=20 Hz
11
15
fW/Hz
1/2
Output offset voltage
Vos
Dark state
±4
mV
Cut-off frequency
fc
-3 dB
32
Hz
Output voltage swing
Vo
13
V
Supply current
Icc
Dark state
0.3
mA
S8745-01, S8746-01 may be damaged by Electro Static Discharge, etc. Please see Precautions for use in the last page.