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參數(shù)資料
| 型號(hào)： | S8650 |
| 元件分類： | 光敏二極管 |
| 英文描述： | PIN PHOTO DIODE |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 83K |
| 代理商： | S8650 |
S8650
S8650 Si PIN photodiode has an epoxy coating window processed to have a flat surface (flatness: ±5 m). When bonded to a scintillator, the flat
surface allows highly tight coupling to the scintillator so bubbles are unlikely to penetrate in between.
We also accept special orders for machining flat surfaces on other ceramic package products. Feel free to place an order with us.
Features
l Flat epoxy coating surface ideal for bonding to scintillator
Flatness: ±5 m
l Active area: 10 × 10 mm
(Other sizes are also available on request.)
Applications
l Scintillation X-ray detectors
l Calorimeters, etc.
PHOTODIODE
Si PIN photodiode
Flat surface ideal for bonding to scintillator
s Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
Value
Unit
Reverse voltage
VR Max.100
V
Operating temperature
Topr
-20 to +60
°C
Storage temperature
Tstg
-20 to +80
°C
s Electrical and optical characteristics (Ta=25
°C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
λ
-
320 to 1100
-
nm
Peak sensitivity wavelength
λp
-
960
-
nm
λ=λp
-0.66
-
A/W
BGO:
λ=480 nm
-0.30
-
A/W
Photo sensitivity
S
CsI (Tl):
λ=540 nm
-0.37
-
A/W
Dark current
ID
VR=70 V
-
2
6
nA
Cut-off frequency
fc
λ=780 nm, VR=70 V
RL=50
, -3 dB
-40
-
MHz
Terminal capacitance
Ct
VR=70 V, f=1 MHz
-
40
-
pF
Noise equivalent power
NEP
VR=70 V,
λ=λp
3.8 × 10
-14
-W/Hz
1/2
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S8664-50K | AVALANCHE PHOTO DIODE |
| S8664-05K | AVALANCHE PHOTO DIODE |
| S8745-01 | PHOTO DIODE |
| S8746-01 | PHOTO DIODE |
| S9074 | PHOTO DIODE |
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