參數(shù)資料
型號: S852T
廠商: Vishay Intertechnology,Inc.
英文描述: Silicon NPN Planar RF Transistor
中文描述: 硅NPN平面射頻晶體管
文件頁數(shù): 1/7頁
文件大?。?/td> 119K
代理商: S852T
S852T/S852TW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
1 (7)
Document Number 85052
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.2 mA to 5 mA.
Features
Low supply voltage
Low current consumption
50 input impedance at 945 MHz
Low noise figure
High power gain
13 581
2
3
1
94 9280
S852T Marking: 852
1 = Collector, 2 = Base, 3 = Emitter
2
1
3
13 652
13 570
S852TW Marking: W52
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
12
6
2
8
30
150
Unit
V
V
V
mA
mW
C
C
T
amb
125 C
–65 to +150
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Junction ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 m Cu
Test Conditions
Symbol
R
thJA
Value
450
Unit
K/W
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