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參數(shù)資料
| 型號： | S860T |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | BIPMIC - Cascadable Silicon Bipolar Amplifier |
| 中文描述： | BIPMIC -硅雙極放大器級聯(lián) |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 67K |
| 代理商： | S860T |
S860T
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
1 (5)
Document Number 85055
BIPMIC
– Cascadable Silicon Bipolar Amplifier
Electrostatic sensitive device.
Observe precautions for handling.
Applications
General purpose for narrow and broad band IF and RF
amplifiers in commercial and industrial applications
with low power consumption. This allows to build am-
plifiers with minimal external circuitry, thus providing a
simple, cost effective way to achieve low level amplifi-
cation, for example in cordless phones.
Features
Broadband amplification
Low operating voltage (3 V)
Low operating current
High gain (8.5 dB @900 MHz and 50 )
Low cost surface mount plastic package
Few external components
13 579
2
1
4
3
94 9279
S860T Marking: 860
Plastic case (SOT 143)
1 = RF-output, 2 = Ground,
3 = RF-input, 4 = Ground
Typical biasing configuration
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Device current
RF input power
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
I
bias
P
in
P
tot
T
j
T
stg
Value
4
0
8
150
Unit
mA
dBm
mW
C
C
T
amb
≤
146 C
–65 to +150
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Junction ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 m Cu
Test Conditions
Symbol
R
thJA
Value
450
Unit
K/W
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