參數(shù)資料
型號： S8385-04
廠商： Hamamatsu Photonics
英文描述： Si PIN photodiode
中文描述： 硅PIN光電二極管
文件頁數(shù)： 2/2頁
文件大?。?/td> 108K
代理商： S8385-04
Si PIN photodiode
S8385/S8729 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho,
Higashi-ku,
Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesv
gen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2006 Hamamatsu Photonics K.K.
Cat. No. KPIN1064E04
Apr. 2006 DN
2
I
Dimensional outlines (unit: mm)
I
Spectral response
I
Dark current vs. reverse voltage
KPINB0271EB
KPINB0273EA
KPINA0090EA
KPINA0091EB
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0200
400
600
800
WAVELENGTH (nm)
1000
1200
P
(Typ. Ta=25 C)
QE=100 %
S8729
S8729-10
S8729-04
S8385-04
S8385
10 pA
100 pA
1 nA
10 nA
1 pA
0.01
0.1
1
10
REVERSE VOLTAGE (V)
100
D
(Typ. Ta=25
C)
S8385, S8385-04
S8729, S8729-04, S8729-10
S8385, S8385-04, S8729, S8729-04
S8729-10
5.0 MAX.
(INCLUDING BURR)
4.7 *
ACTIVE AREA
a
4
(
1.8
5.0 MAX.
(INCLUDING BURR)
4.7 *
4.8 *
4
(
0
2.54
(
×
)
(
×
)
0.25
0.8
0.5
(2
×
) 0.5
(2
×
) 0.4
4
PHOTOSENSITIVE
SURFACE
2.0
DEPTH 0.15 MAX.
(2
×
) 10
°
(2
×
) 5
°
Tolerance unless otherwise noted: ±0.1, ±2
Chip position accuracy with respect to the
package dimensions marked *
X, Y
≤
±0.2,
θ≤
±2
Symbol
a
S8385
S8385-04
2
×
2
2
×
3.3
S8729
S8729-04
5.0 MAX.
(INCLUDING BURR)
4.7 *
4
(
5.0 MAX.
(INCLUDING BURR)
4.7 *
4.8 *
(
×
)
(
×
)
±
(
×
)
4
2
(
×
)
(2
×
) 10
°
(2
×
) 5
°
Tolerance unless otherwise noted: ±0.1, ±2
Chip position accuracy with respect to the
package dimensions marked *
X, Y
≤
±0.2,
θ≤
±2
0.8
0.5
1.8
(2
×
) 4.5 ± 0.4
ACTIVE AREA
2
×
3.3
0
PHOTOSENSITIVE
SURFACE
2.0
DEPTH 0.15 MAX.
2.54
(2
×
) 0.5
(2
×
) 0.4
I
Terminal capacitance vs. reverse voltage
(Typ. Ta=25
C, f=1 MHz)
KPINB0272EA
1 pF
10 pF
100 pF
1 nF
100 fF0.1
1
10
REVERSE VOLTAGE (V)
100
T
S8729, S8729-04, S8729-10
S8385, S8385-04
相關(guān)PDF資料
PDF描述
S8385 Diode; High speed switching; VR (V): 30; IF (mA): -; Pd (mW): 250; rf (ohm) max: -; Condition IF at rf (mA): -; Condition f at rf (MHz): -; VF (V) max: 0.8; Condition IF at VF (mA): 10; C (pF) max: 3; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: DO-35
S8729 Si PIN photodiode
S8729-04 Si PIN photodiode
S8729-10 Si PIN photodiode
S8543 One-dimensional PSD Long, narrow active area and surface mountable package
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