參數(shù)資料
型號: S8385-04
廠商: Hamamatsu Photonics
英文描述: Si PIN photodiode
中文描述: 硅PIN光電二極管
文件頁數(shù): 1/2頁
文件大?。?/td> 108K
代理商: S8385-04
S8385/S8729 series is a family of large area Si PIN photodiodes molded into a miniature plastic SIP package (75 % smaller in cubic volume than
conventional types). Also available are lead forming types that save space when mounted on a PC board.
P H O T O D I O D E
Si PIN photodiode
S8385/S8729 series
SIP plastic package
Features
Applications
l
Small plastic package: 4 × 4.8 × 1.8
t
mm
l
2-pin SIP lead type (lead length: 4.9 mm)
l
High sensitivity, high speed response
l
2 types of spectral response characteristics available
S8385, S8729, S8729-10: for visible to infrared range
(
λ
=320 to 1100 nm)
S8385-04, S8729-04: for infrared (
λ
=760 to 1100 nm)
l
Lead forming type also available (S8729-10)
l
Active area
S8385 series: 2 × 2 mm
S8729 series: 2 × 3.3 mm
l
Barcode scanners
l
Spatial light transmission
l
Optical switches
l
Laser radar, etc.
1
I
General ratings / Absolute maximum ratings
Absolute maximum ratings
Power
dissipation
P
(mV)
Active area
size
Effective
active area
Reverse
voltage
V
R
Max.
(V)
Operating
temperature
Topr
(°C)
Storage
temperature
Tstg
(°C)
Type No.
Dimensional
outline
Package
(mm)
(mm
2
)
S8385
S8385-04
S8729
S8729-04
S8729-10
2 × 2
4
Plastic
2 × 3.3
6.6
20
50
-25 to +85
-40 to +100
I
Electrical and optical characteristics
Photo sensitivity
S
(A/W)
Spectral
response
range
λ
Peak
sensitivity
wavelength
λ
p
Short
circuit
current
Isc
100
lx
Dark
current
I
D
V
R
=5 V
Temperature
coefficient of
I
D
T
CID
Cut-off
frequency
fc
V
R
=5 V
λ
=780 nm
R
L
=50
-3 dB
Terminal
capacitance
Ct
V
R
=5 V
f=1 MHz
NEP
λ
=
λ
p
Type No.
(nm)
(nm)
λ
p
660
nm
780
nm
830
nm
(μA)
4.2
2.8
7.5
5
7.5
Typ.
(nA)
Max.
(nA)
(times/° C)
(MHz)
(pF)
(W/Hz
1/2
)
S8385
S8385-04
S8729
S8729-04
S8729-10
320 to 1100
760 to 1100
320 to 1100
760 to 1100
320 to 1100
0.4
-
0.45
-
0.45
0.48
-
0.55
-
0.55
0.5
0.44
0.6
0.52
0.6
0.56
0.1
1.0
12
1.0 × 10
-14
0.7
0.68
0.7
1.1 × 10
-14
1.2 × 10
-14
1.1 × 10
-14
960
0.2
2.0
1.15
25
16
相關(guān)PDF資料
PDF描述
S8385 Diode; High speed switching; VR (V): 30; IF (mA): -; Pd (mW): 250; rf (ohm) max: -; Condition IF at rf (mA): -; Condition f at rf (MHz): -; VF (V) max: 0.8; Condition IF at VF (mA): 10; C (pF) max: 3; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: DO-35
S8729 Si PIN photodiode
S8729-04 Si PIN photodiode
S8729-10 Si PIN photodiode
S8543 One-dimensional PSD Long, narrow active area and surface mountable package
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