參數(shù)資料
型號(hào)： S7PF30L
廠商： 意法半導(dǎo)體
英文描述： P-CHANNEL 30V - 0.16ヘ - 7A - SO-8 STripFET⑩ II Power MOSFET
中文描述： P通道30V的- 0.16ヘ- 7A條-的SO - 8 STripFET⑩二功率MOSFET
文件頁(yè)數(shù)： 4/11頁(yè)
文件大?。?/td> 223K
代理商： S7PF30L
2 Electrical characteristics
STS7PF30L
4/11
Table 6.
Source-Drain Diode
(1) Pulse with limited by safe operating area
(2) When mounted on 1inch2 FR-4 board (t
≤
10μs)
(3) Pulsed: pulse duration = 300μs, duty cycle 1.5%
Note:
For the P-CHANNEL MOSFET the polarity of voltages and current have to be reversed
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Note
1
Source-Drain Current
Source-Drain Current (pulsed)
7
28
A
A
V
SD
Forward On Voltage
I
SD
= 7A, V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 7A, di/dt = 100A/μs
V
DD
= 15V, T
j
= 150°C
(see Figure 15)
40
46
2.3
ns
nC
A
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