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參數(shù)資料
| 型號(hào)： | S7PF30L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | P-CHANNEL 30V - 0.16ヘ - 7A - SO-8 STripFET⑩ II Power MOSFET |
| 中文描述： | P通道30V的- 0.16ヘ- 7A條-的SO - 8 STripFET⑩二功率MOSFET |
| 文件頁數(shù)： | 3/11頁 |
| 文件大小： | 223K |
| 代理商： | S7PF30L |
STS7PF30L
2 Electrical characteristics
3/11
2
Electrical characteristics
(T
J
= 25 °C unless otherwise specified)
Table 3.
On/off states
Table 4.
Dynamic
Table 5.
Switching times
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-Source Breakdown
Voltage
I
D
= 250μA, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage Drain
Current (V
GS
= 0)
V
DS
= Max Rating,
V
DS
= Max Rating, T
c
=125°C
1
10
μA
μA
I
GSS
Gate Body Leakage Current
(V
DS
= 0)
V
DS
= ± 16V
±100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250μA
1
1.6
2.5
V
R
DS(on)
Static Drain-Source On
Resistance
V
GS
= 10 V, I
D
= 3.5A
V
GS
= 4.5 V, I
D
= 3.5A
0.011
0.016
0.016
0.022
0.021
0.028
Ω
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Note
3
Forward Transconductance
V
DS
= 20V
,
I
D
= 3.5A
16
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25V, f = 1MHz, V
GS
=0
2600
523
174
pF
pF
pF
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 15V, I
D
= 7A,
V
GS
= 4.5V
28
8.75
12.35
7
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 15V, I
D
= 3.5A
R
G
= 4.7
Ω
, V
GS
= 4.5V,
(see Figure 13)
68
54
ns
ns
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 15V, I
D
= 3.5A
R
G
= 4.7
Ω
, V
GS
= 4.5V,
(see Figure 13)
65
23
ns
ns
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