
S7998 is a UV to near IR detector using a 3 × 3 mm photodiode integrated with preamplifier. The photodiode chip and the preamplifier are
assembled at high density by direct bump connections. The preamplifier bias current is so small that a high feedback resistance of 1 G
can be
used. Built-in feedback resistance types and metal package types are also available upon request.
Features
l Compact ceramic package: 13.2 × 7.37 mm
l Uses a UV to near IR Si photodiode (3 × 3 mm)
for high-precision photometry
l Uses a low bias current preamplifier: Ib=64 pA Max.
l Low noise
l Low current consumption
Applications
l Precision photometry
l General photometry
PHOTODIODE
Si photodiode with preamp
Photodiode (3 × 3 mm)/preamplifier assembly in compact package
S7998
I Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Preamp supply voltage
Vcc
± 6
V
Photodiode reverse voltage
VR
5
V
Operating temperature
Topr
-20 to +60
°C
Storage temperature
Tstg
-20 to +80
°C
I Electrical and optical characteristics of photodiode (Ta=25 °C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
l
-
190 to 1100
-
nm
Peak sensitivity wavelength
lp
-
880
-
nm
l=200 nm
0.1
0.12
-
A/W
Photo sensitivity
S
l=lp
-0.43
-
A/W
Dark current
ID
VR=10 mV
-
50
250
pA
Shunt resistance
Rsh
VR=10 mV
-
0.2
-
GW
Terminal capacitance
Ct
VR=0 V, f=10 kHz
-
120
-
pF
I Electrical and optical characteristics of preamp (Ta=25 °C, Vcc=±5 V)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Input offset voltage
Vos
-
±0.7
±5
mV
Input offset voltage temperature drift
DVos
-
4
-
V/°C
Input bias current
Ib
±1
±64
pA
Input offset current
Ios
-
0.5
32
pA
Output voltage amplitude
Vo
RL=2 kW
±4.8
±4.9
-
V
Gain bandwidth
GBW
-
1.3
-
MHz
Equivalent noise input voltage
Vn
f=10 kHz
-
33
-
nVrms/Hz1/2
Equivalent noise input current
In
f=10 kHz
-
1.5
-
fA/Hz1/2
Supply current
Icc
-
1.3
1.7
mA
1