參數(shù)資料
型號(hào): S8064
元件分類: 光電元器件
英文描述: LOGIC OUTPUT PHOTO DETECTOR
封裝: PLASTIC PACKAGE-4
文件頁數(shù): 1/2頁
文件大?。?/td> 132K
代理商: S8064
S8030 and S8064 are light modulation photo ICs consisting of a dual photodiode and a control/processing circuit. When used with
an infrared LED and light emitting/receiving lenses, these photo ICs detect the distance (near or far) to an object at a certain
measurement cycle by utilizing the optical triangular distance measurement.
Features
l Detects distance (near/far) to object
l Photodiode, LED drive circuit and signal processing
circuit are all integrated.
l Open collector output
l Visible light cut package impervious to disturbance
background light
l Subminiature plastic package
Applications
l Optical switch
PHOTO
IC
Photo IC for rangefinder
Photo IC designed for near/far distance detection
S8030, S8064
s
Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
S8030
S8064
Unit
Supply voltage
Vcc
-0.5 to +7.0
V
Output voltage
Vo
-0.5 to +7.0
V
Output current
Io
50
mA
LED terminal voltage
VLED
-0.5 to +7.0
V
LED terminal current
ILED
70
mA
Power dissipation
P
250 *
mW
Operating temperature
Topr
-20 to +70
°C
Storage temperature
Tstg
-30 to +80
°C
Soldering
-
230 °C, 5 s
230 °C, 5 s, at least 1.8 mm away
from package surface
-
* Derate power dissipation at a rate of 3.3 mW/°C above Ta=25 °C
s
Electrical and optical characteristics (Ta=25 °C, Vcc=5 V, unless otherwise noted)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Peak sensitivity wavelength
lp
-850
-
nm
Photo sensitivity
S
l=900 nm
-
0.3
-
A/W
Operation supply voltage
Vcc
4.5
5
6
V
Current consumption
Icc
-
4
6
mA
High level LED output current
ILEDH VLED=5 V
-
1
mA
Low level LED output voltage
VLEDL Sink 10 mA
-
0.2
0.4
V
Low level LED pulse width
Tw
4.6
7
10.5
ms
LED pulse cycle
Tp
150
224
336
ms
Threshold input difference current
ITH
No background light
2.5
5
10
nA
Allowable background light
Ex
A light source
500 lx or less between
channels
3000
-
lx
High level output current
IOH
VOUT=5 V
-
1
mA
Low level output voltage
VOL
Sink 10 mA
-
0.2
0.4
V
Note) A bypass capacitor (0.1 mF) should be connected between Vcc and GND at a position within 7 mm from the photo IC lead.
Another capacitor (4.7 mF) should also be connected nearby between Vcc and GND.
1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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S8065JTP 功能描述:SCR SCR 800V 65A Iso RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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