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參數(shù)資料
| 型號： | S7978 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | MOSFET, Switching; VDSS (V): -60; ID (A): -40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.033; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 25; Package: LDPAK (S)- (1) |
| 中文描述： | 硅光電二極管陣列5】5個(gè)元素的數(shù)組X射線探測器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 92K |
| 代理商： | S7978 |
Features
l
High reliability photodiode with ceramic scintillator
High X-ray sensitivity: 1.8 times higher than CWO scintillator
Less afterglow: <0.1 %/3 ms, <0.01 %/30 ms
No deliquescence
l
5 × 5 element photodiode array
l
Number of channels can be increased by connecting
several S7978 together.
Applications
l
X-ray analysis, X-ray detection
P H O T O D I O D E
Si photodiode array
S7978
5 × 5 element array for X-ray detector
I
Absolute maximum ratings (Ta=25
°
C)
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
V
R
Max.
Topr
Tstg
Value
5
-10 to +60
-20 to +70
Unit
V
°
C
°
C
I
Electrical and optical characteristics (Ta=25
°
C, per 1 element, without scintillator)
Parameter
Symbol
Spectral response range
λ
With resin
Peak sensitivity wavelength
λ
p
Photo sensitivity
S
λ
=500 nm, with resin
Dark current
I
D
V
R
=10 mV
Terminal capacitance
Ct
V
R
=5 V, f=10 kHz
Condition
Min.
-
-
-
-
-
Typ.
Max.
-
-
-
10
50
Unit
nm
μm
A/W
pA
pF
220 to 1000
720
0.36
0.1
30
I
X-ray sensitivity (reference value, per 1 element, tube current: 1.0 mA, aluminum filter: t=6 mm, distance=830 mm)
X-ray tube voltage
120 kV
Note) Depends on equipment and measurement conditions.
Typ.
2.1
Unit
nA
1
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