參數(shù)資料
型號: S71WS512N80BFEZZ2
廠商: Spansion Inc.
英文描述: Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
中文描述: 堆疊式多芯片產(chǎn)品(MCP)的閃存和移動存儲芯片的CMOS 1.8伏特
文件頁數(shù): 103/142頁
文件大?。?/td> 1996K
代理商: S71WS512N80BFEZZ2
June 28, 2004 S71WS512NE0BFWZZ_00_A1
128Mb pSRAM
103
P r e l i m i n a r y
FUNCTIONAL DESCRIPTION (Continued)
Latency
Read Latency (RL) is the number of clock cycles between the address being latched
and first read data becoming available during synchronous burst read operation.
It is set through CR Set sequence after power-up. Once specific RL is set through
CR Set sequence, write latency, that is the number of clock cycles between address
being latched and first write data being latched, is automatically set to RL-1. The
burst operation is always started after fixed latency with respect to Read Latency
set in CR.
ADDRESS
ADV#
CLK
Valid
Q1
Q2
Q3
D1
D2
D3
D4
0
1
2
3
4
5
RL=3
Q4
D5
DQ [Out]
DQ [In]
CE#1
OE# or WE#
WAIT#
WAIT#
6
Q5
D5
Q1
Q2
D1
D2
D3
RL=4
Q3
D4
DQ [Out]
DQ [In]
WAIT#
WAIT#
Q4
D5
Q1
D1
D2
RL=5
Q2
D3
DQ [Out]
DQ [In]
WAIT#
WAIT#
Q3
D4
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S71WS512N80BFEZZ3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BFIZZ0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BFIZZ2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BFIZZ3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BFWZZ0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt