參數(shù)資料
型號: S71PL129JC0BAW9U2
廠商: SPANSION LLC
元件分類: 存儲器
英文描述: Stacked Multi-Chip Product (MCP) Flash Memory
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA64
封裝: 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-64
文件頁數(shù): 120/149頁
文件大?。?/td> 2693K
代理商: S71PL129JC0BAW9U2
120
Type 2 pSRAM
pSRAM_Type02_15A1 June 25, 2004
A d v a n c e I n f o r m a t i o n
Functional Description
Legend:
X = Don’t care (must be low or high state).
Absolute Maximum Ratings
Notes:
1.
Stresses greater than those listed under "
Absolute Maximum Ratings
" section may cause permanent damage to the device.
Functional operation should be restricted to be used under recommended operating condition. Exposure to absolute
maximum rating conditions longer than one second may affect reliability.
DC Recommended Operating Conditions
Notes:
1.
TA= -40 to 85°C, unless otherwise specified.
2.
Overshoot: V
CC
+ 1.0V in case of pulse width
20ns.
3.
Undershoot: -1.0V in case of pulse width
20ns.
4.
Overshoot and undershoot are sampled, not 100% tested.
Mode
CS1#
CS2
OE#
W E#
LB#
UB#
I / O
1-8
I / O
9-16
Pow er
Deselected
H
X
X
X
X
X
High-Z
High-Z
Standby
Deselected
X
L
X
X
X
X
High-Z
High-Z
Standby
Deselected
X
X
X
X
H
H
High-Z
High-Z
Standby
Output Disabled
L
H
H
H
L
X
High-Z
High-Z
Active
Outputs Disabled
L
H
H
H
X
L
High-Z
High-Z
Active
Lower Byte Read
L
H
L
H
L
H
D
OUT
High-Z
Active
Upper Byte Read
L
H
L
H
H
L
High-Z
D
OUT
Active
Word Read
L
H
L
H
L
L
D
OUT
D
OUT
Active
Lower Byte Write
L
H
X
L
L
H
D
IN
High-Z
Active
Upper Byte Write
L
H
X
L
H
L
High-Z
D
IN
Active
Word Write
L
H
X
L
L
L
D
IN
D
IN
Active
Item
Symbol
Ratings
Unit
Voltage on any pin relative to V
SS
V
IN ,
V
OUT
-0.2 to V
CC
+ 0.3V
V
Voltage on V
CC
supply relative to V
SS
V
CC
-0.2 to 3.6V
V
Power Dissipation
P
D
1.0
W
Operating Temperature
T
A
-40 to 85
°C
Symbol
Parameter
Min
Typ
Max
Unit
V
CC
Power Supply Voltage
2.7
2.9
3.1
V
V
SS
Ground
0
0
0
V
IH
Input High Voltage
2.2
V
CC
+ 0.3 (Note 2)
V
IL
Input Low Voltage
-0.2 (Note 3)
0.6
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