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參數(shù)資料
| 型號： | S71AL016D02BAWBF0 |
| 廠商： | SPANSION LLC |
| 元件分類： | 存儲器 |
| 英文描述： | Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA56 |
| 封裝： | 7 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-56 |
| 文件頁數(shù)： | 67/76頁 |
| 文件大?。?/td> | 909K |
| 代理商： | S71AL016D02BAWBF0 |
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August 4, 2004 SRAM_Type04_04A0
2Mbit Type 2 SRAM
67
P r e l i m i n a r y
Operating Range
Product Portfolio
Notes:
1. V
IL(min.)
= –2.0V for pulse durations less than 20 ns.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
=
V
CC(typ.)
, T
A
= 25°C.
Electrical Characteristics
Notes:
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
=
V
CC(typ.)
, T
A
= 25°C.
Range
Ambient Temperature
V
CC
Industrial
-40°C to +85°C
2.7V to 3.3V
V
CC
Range
Speed
Power Dissipation (Industrial)
Operating, I
CC
Standby (I
SB2
)
f = 1 MHz
f = f
max
V
CC (min)
V
CC (typ.)
(note 2)
V
CC (max)
Typ. (note 2)
Max
Typ. (note 2)
Max
Typ. (note 2)
Max
2.7V
3.0V
3.3V
55 ns
1.5 mA
3 mA
12 mA
25 mA
2 μA
10 μA
70 ns
1.5 mA
3 mA
7 mA
15 mA
Voltage Range 2.7V - 3.3V
Parameter
Description
Test Conditions
Min.
Typ.
(note 1)
Max
Unit
V
OH
Output High Voltage
I
OH
= –1.0 mA
V
CC
= 2.7V
2.4
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
V
CC
= 2.7V
0.4
V
IH
Input High Voltage
2.2
V
CC
+ 0.3V
V
IL
Input Low Voltage
-0.3
0.8
I
IX
Input Leakage Current
GND < V
I
< V
CC
-1
+1
μA
I
OZ
Output Leakage Current
GND < V
O
< V
CC
, Output Disabled
-1
+1
I
CC
V
CC
Operating Supply Current
f = f
MAX
= 1/t
RC
V
CC
= 3.3V
I
= 0 mA
CMOS Levels
7
15
mA
f = 1 MHz
1.5
3
I
SB1
Automatic CE Power-Down
Current—CMOS Inputs
CE#
≥
V
CC
– 0.2V
V
≥
V
– 0.2V or V
≤
0.2V,
f = fmax (Address and Data Only),
f=0 (OE#, WE#, BHE# and BLE#)
2
10
μA
I
SB2
Automatic CE Power-Down
Current—CMOS Inputs
CE#
≥
V
CC
– 0.2V
V
≥
V
CC
– 0.2V or V
IN
≤
0.2V,
f = 0, V
CC
= 3.3V
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