參數(shù)資料
型號: S70WS512N00BFWAB0
廠商: Spansion Inc.
英文描述: Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述: 同硅晶片堆疊多芯片產(chǎn)品(MCP)的512兆位(32兆× 16位)的CMOS 1.8伏,只有同時讀/寫,突發(fā)模式閃存
文件頁數(shù): 80/93頁
文件大?。?/td> 846K
代理商: S70WS512N00BFWAB0
March 14, 2005 S70WS512N00_00_A0
S70WS512N00 Based MCPs
81
A d v a n c e I n f o r m a t i o n
W ait State Configuration Register Setup:
D13, D12, D11 =
111
Reserved
D13, D12, D11 =
110
Reserved
D13, D12, D11 =
101
5 programmed, 7 total
D13, D12, D11 =
100
4 programmed, 6 total
D13, D12, D11 =
011
3 programmed, 5 total
D13, D12, D11 =
010
2 programmed, 4 total
D13, D12, D11 =
001
1 programmed, 3 total
D13, D12, D11 =
000
0 programmed, 2 total
Note:
6.Figure assumes address D0 is not at an address boundary, and wait state is set to
101
Figure 12.23 Example of Wait State Insertion
Data
AVD#
OE#
CLK
1
2
3
4
5
D0
D1
0
1
6
2
7
3
total number of clock cycles
following addresses being latched
Rising edge of next clock cycle
following last wait state triggers
next burst data
number of clock cycles
programmed
4
5
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S70WS512N00BFWAB2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
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