參數(shù)資料
型號(hào)： S70WS512N00BFWAA3
廠商： Spansion Inc.
英文描述： Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述： 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時(shí)讀/寫(xiě)，突發(fā)模式閃存
文件頁(yè)數(shù)： 68/93頁(yè)
文件大?。?/td> 846K
代理商： S70WS512N00BFWAA3
March 14, 2005 S70WS512N00_00_A0
S70WS512N00 Based MCPs
69
A d v a n c e I n f o r m a t i o n
12.8.3
Timing Diagrams
Notes:
1.
Figure shows total number of wait states set to five cycles. The total number of wait states can be programmed from two
cycles to seven cycles.
If any burst address occurs at
address + 1
,
address + 2
, or
address + 3
, additional clock delay cycles are inserted, and
are indicated by RDY.
The device is in synchronous mode.
2.
3.
Figure 12.7 CLK Synchronous Burst Mode Read
Da
Da + 1
Da + n
OE#
Data (n)
Addresses
Aa
AVD#
RDY (n)
CLK
CE#
t
CES
t
ACS
t
AVC
t
AVD
t
ACH
t
OE
t
RACC
t
OEZ
t
CEZ
t
IACC
t
AOE
t
BDH
5 cycles for initial access shown.
18.5 ns typ. (54 MHz)
Hi-Z
Hi-Z
Hi-Z
1
2
3
4
5
6
7
t
RDYS
t
BACC
Da + 3
Da + 2
Da
Da + 1
Da + n
Data (n + 1)
RDY (n + 1)
Hi-Z
Hi-Z
Hi-Z
Da + 2
Da + 2
Da
Da + 1
Da + n
Data (n + 2)
RDY (n + 2)
Hi-Z
Hi-Z
Hi-Z
Da + 1
Da + 1
Da
Da
Da + n
Data (n + 3)
RDY (n + 3)
Hi-Z
Hi-Z
Hi-Z
Da
Da
t
CR
相關(guān)PDF資料
PDF描述
S70WS512N00BFWAB0 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S71AL016D Stacked Multi-Chip Product (MCP) Flash Memory and RAM
S71AL016D02 Stacked Multi-Chip Product (MCP) Flash Memory and RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S70WS512N00BFWAB0 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB2 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB3 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70Y 功能描述:整流器 1600V 70A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S70YR 功能描述:整流器 1600V 70A REV Leads Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
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