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參數(shù)資料
| 型號： | S70WS512N00BAWAB2 |
| 廠商： | Spansion Inc. |
| 英文描述： | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| 中文描述： | 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 34/93頁 |
| 文件大?。?/td> | 846K |
| 代理商： | S70WS512N00BAWAB2 |
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March 14, 2005 S70WS512N00_00_A0
S70WS512N00 Based MCPs
35
A d v a n c e I n f o r m a t i o n
Notes:
1.
Base = Base Address.
2. Last = Last cycle of write buffer program operation; depending on number of words written, the total
number of cycles may be from 6 to 37.
3. For maximum efficiency, it is recommended that the write buffer be loaded with
the highest number of words (N words) possible.
The following is a C source code example of using the write buffer program function. Refer to
the
S pansion Low Lev el Driv er User Guide
( available on
www.amd.com
and
www.fujitsu.com
m) for general information on Spansion Flash memory software develop-
ment guidelines.
/* Example: Write Buffer Programming Command */
/* NOTES: Write buffer programming limited to 16 words. */
/* All addresses to be written to the flash in */
/* one operation must be within the same flash */
/* page. A flash page begins at addresses */
/* evenly divisible by 0x20. */
UINT16 *src = source_of_data; /* address of source data */
UINT16 *dst = destination_of_data; /* flash destination address */
UINT16 wc = words_to_program -1; /* word count (minus 1) */
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */
*( (UINT16 *)sector_address ) = 0x0025; /* write write buffer load command */
*( (UINT16 *)sector_address ) = wc; /* write word count (minus 1) */
loop:
*dst = *src; /* ALL dst MUST BE SAME PAGE */ /* write source data to destination */
dst++; /* increment destination pointer */
src++; /* increment source pointer */
if (wc == 0) goto confirm /* done when word count equals zero */
wc--; /* decrement word count */
goto loop; /* do it again */
confirm:
*( (UINT16 *)sector_address ) = 0x0029; /* write confirm command */
/* poll for completion */
/* Example: Write Buffer Abort Reset */
*( (UINT16 *)addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */
*( (UINT16 *)addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */
*( (UINT16 *)addr + 0x555 ) = 0x00F0; /* write buffer abort reset */
Software Functions and Sample Code
Table 8.13 Write Buffer Program
(LLD Functions Used = lld_ WriteToBufferCmd, lld_ ProgramBufferToFlashCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Unlock
Write
Base + AAAh
Base + 555h
00AAh
2
Unlock
Write
Base + 554h
Base + 2AAh
0055h
3
Write Buffer Load Command
Write
Program Address
0025h
4
Write Word Count
Write
Program Address
Word Count (N–1)h
Number of w ords ( N) loaded into the w rite buffer can be from 1 to 32 w ords.
5 to 36
Load Buffer Word N
Write
Program Address, Word N
Word N
Last
Write Buffer to Flash
Write
Sector Address
0029h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S70WS512N00BAWAB3 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWA20 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWA22 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWA23 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWA30 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S70WS512N00BAWAB3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWA20 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWA22 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWA23 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWA30 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
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