參數(shù)資料
型號(hào)： S70WS512N00BAWAA2
廠商： Spansion Inc.
英文描述： Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述： 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時(shí)讀/寫，突發(fā)模式閃存
文件頁(yè)數(shù)： 26/93頁(yè)
文件大小： 846K
代理商： S70WS512N00BAWAA2
March 14, 2005 S70WS512N00_00_A0
S70WS512N00 Based MCPs
27
A d v a n c e I n f o r m a t i o n
8.3.2
8-, 16-, 32-W ord Linear Burst Read w ith W rap Around
In a linear burst read operation, a fixed number of words (8, 16, or 32 words) are read from con-
secutive addresses that are determined by the group within which the starting address falls. The
groups are sized according to the number of words read in a single burst sequence for a given
mode (see
Table 8.7
).
For example, if the starting address in the 8-word mode is 3Ch, the address range to be read
would be 38-3Fh, and the burst sequence would be 3C-3D-3E-3F-38-39-3A-3Bh. Thus, the device
outputs all words in that burst address group until all word are read, regardless of where the start-
ing address occurs in the address group, and then terminates the burst read.
In a similar fashion, the 16-word and 32-word Linear Wrap modes begin their burst sequence on
the starting address provided to the device, then wrap back to the first address in the selected
address group.
Note that in this mode the address pointer does not cross the boundary that occurs every 128
words; thus, no additional wait states are inserted due to boundary crossing.
8.3.3
8-, 16-, 32-W ord Linear Burst w ithout W rap Around
If wrap around is not enabled for linear burst read operations, the 8-word, 16-word, or 32-word
burst executes up to the maximum memory address of the selected number of words. The burst
stops after 8, 16, or 32 addresses and does not wrap around to the first address of the selected
group.
For example, if the starting address in the 8- word mode is 3Ch, the address range to be read
would be 39-40h, and the burst sequence would be 3C-3D-3E-3F-40-41-42-43h if wrap around
is not enabled. The next address to be read requires a new address and AVD# pulse. Note that
in this burst read mode, the address pointer may cross the boundary that occurs every 128 words,
which will incur the additional boundary crossing wait state.
8.3.4
Configuration Register
The configuration register sets various operational parameters associated with burst mode. Upon
power-up or hardware reset, the device defaults to the asynchronous read mode, and the config-
uration register settings are in their default state. The host system should determine the proper
settings for the entire configuration register, and then execute the Set Configuration Register
command sequence, before attempting burst operations. The configuration register is not reset
after deasserting CE#. The Configuration Register can also be read using a command sequence
(see
Table 13.1
). The following list describes the register settings.
Table 8.7 Burst Address Groups
Mode
Group Size
Group Address Ranges
8-word
8 words
0-7h, 8-Fh, 10-17h,...
16-word
16 words
0-Fh, 10-1Fh, 20-2Fh,...
32-word
32 words
00-1Fh, 20-3Fh, 40-5Fh,...
相關(guān)PDF資料
PDF描述
S70WS512N00BAWAA3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB0 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA20 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S70WS512N00BAWAA3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWA20 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
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