參數(shù)資料
型號: S6C1104
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 6 BIT 384 CHANNEL RSDS TFT-LCD SOURCE DRIVER
中文描述: 6位384通道區(qū)特別職務(wù)隊(duì)的TFT - LCD源驅(qū)動
文件頁數(shù): 17/20頁
文件大?。?/td> 228K
代理商: S6C1104
6 BIT 384 CHANNEL RSDS SOURCE DRIVER
S6C1104
17
AC CHARACTERISTICS
Table 7. AC Characteristics
(Ta = - 20 to 75
°
C, VDD1 = 2.7 to 3.6 V, VDD2 = 7.0 to 12.0 V, VSS1 = VSS2 = 0 V)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Clock pulse width
PWCLK
-
11.7
-
-
Clock pulse low period
PWCLK(L)
-
4
-
-
Clock pulse high period
PWCLK(H)
-
4
-
-
Data setup time
tSETUP1
(1)
2
-
-
Data hold time
tHOLD1
(1)
0
-
-
Start pulse setup time
tSETUP2
(1)
4
-
-
Start pulse hold time
tHOLD2
(1)
2
-
-
Start pulse delay time
tPLH1
CL = 15pF
-
-
7.7
ns
DIO signal pulse width
PWDIO
-
1CLKP
-
2CLKP
CLK1 setup time
tSETUP3
-
2CLKP
-
-
CLK1 high pulse width
PWCLK1
-
5CLKP
-
-
CLKP
period
Driver output delay time1
tPHL1
(2) (4)
-
-
6
Driver output delay time2
tPHL2
(3) (4)
-
-
10
μ
s
Last data timing
tLDT
-
1CLKP
-
-
CLKP
period
CLK1-CLKP time
tCLK1-CLKP
CLK1
CLKP
POL
or
CLK1
CLK1
POL
or
4
-
-
POL-CLK1 time
tPOL-CLK1
14
-
-
CLK1-POL time
tCLK1-POL
10
-
-
ns
NOTES:
(1).
VCM
RSDS
= +1.1V
,
VDIFF
RSDS
= V
RSDS
P - V
RSDS
N =
±
200mV
(2). The value is specified when the drive voltage value reaches the target output voltage level of 90%
(3). The value is specified when the drive voltage value reaches the target output voltage level of 6-bit accuracy.
(4). Yout load condition (refer to Figure 6)
Figure 6. Yout load condition
Y1
Y2
Y384
30pF
10k
20k
30pF
20k
30pF
Measure Point
相關(guān)PDF資料
PDF描述
S6D0110 132 RGB Source & 176 Gate Driver With Internal GRAM FOR 65,536 Colors TFT-LCD
S6D0114 132 RGB X 176 DOT 1-CHIP DRIVER IC WITH INTERNAL GRAM FOR 262,144 Colors TFT-LCD
S70WS512N00BFWAA2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAA2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAA3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S6C1108 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:6 BIT 384 CHANNEL RSDS TFT-LCD SOURCE DRIVER
S6C1373A02-BJE1 制造商:Samsung Semiconductor 功能描述:"SAMSUNG new line 6 device" COG (Chip-On-Glass) applications
S6C1391A01-BJE8 制造商:Samsung Semiconductor 功能描述:6-bit,966/906/882/870/846/822/804/774-Channel Source Driver With RVDS Interface
S6C1652 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:6 BIT 300 / 309 CHANNEL TFT-LCD SOURCE DRIVER
S6C8DL07GY 制造商:MISC. COMMERCIAL HRD 功能描述: