HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Photo IC for photometry
S6840
Cat. No. KPIC1018E02
Jul. 2001 DN
2.27 ± 0.2
0.8
0.45
0.89
0.6
9.7 ± 0.2
(INCLUDING BURR)
9.5
5.2
8.0
±
0.3
5.4
±
0.2
(INCLUDING
BURR)
1.4
±
0.3
1.4
±
0.3
0.5
±
0.15
0.8
1.7
2.25
0.6
±
0.3
0.1
15
10
0.2
0.6
±
0.3
15
10
PHOTOSENSITIVE
SURFACE
(CATHODE)
GND
VR2
TO (THERMOSENSOR)
VF (PHOTOMETRIC OUTPUT
ADJUSTMENT)
POS (SWITCHABLE GAIN)
VRS (SWITCHABLE GAIN)
5-ELEMENT
PHOTODIODE
1.5
0.35
1.0
(DEPTH 0.15)
a b
c
d
e
Tolerance unless otherwise
noted: ±0.1, ±2
Shaded area indicates burr.
VR
PO (PHOTOMETRIC OUTPUT)
D3
D2
D1
Vcc
(CATHODE)
(SWITCHABLE OUTPUT)
KPICA0019EB
KPICC0033EA
PD. B
LA
+
-
+
-
+
-
LA
VF
BF
BGR
BF1
VR
TO
PO
PD. C
PD. A
PD. D
PD. E
5-ELEMENT
Si PHOTODIODE
SIGNAL
PROCESSING
IC
Vcc
3.0 to 7.0 V
D1
D2
D3
PO
POS
VF
VR2
VR
VRS
TO
GND
+
-
(K)
CHANNEL
SELECTION
DECODER
s Electrical and optical characteristics (Ta=25 °C, Vcc=3.2 V, unless otherwise noted)
Param eter
Sym bol
Condition
Min.
Typ.
Max.
Unit
Term inal
Current consumption
Icc
100 lx, “A” light source, Vcc=6.5 V,
*3
5.0
8.4
m A
-
H Input voltage
VIH
Vcc × 0.7
-
L Input voltage
VIL
-
Vcc × 0.3
V
L Input current
IIL
VIN=0 V
-220
-110
-52
A
D1 (15)
D2 (14)
D3 (13)
Out p ut
s witchin g
Term inal voltage
Vrf
2.05
2.20
2.35
V
Vrf
Load current: 0 to 2 m A
(with respect to 0.5 m A)
-12
-
12
m V
VR (11)
R eference
voltage
VTO
RL=100 k
(with respect to no load)
-10
-
10
mV
TO (7)
Therm o-
sensor
Load regulation *
2
VPO1
RL=100 k
(with respect to no load)
-10
-
10
m V
PO (12)
Therm osensor output
VTO
1.2
1.44
1.68
V
TO (7)
Therm o-
sensor
VPOB~
VPOE
*4
1264
1344
1424
Photom etric output
VPOA
100 lx, “A” light source
VF terminal (8)
resistance: 24 k
, *3
*5
1329
1409
1489
100 lx
→1 lx, “A” light source, *3
503
527
551
*4
770
818
Photom etric output
change
VPO2
100 lx
→0.1 lx,
“A” light source,
*3
*5
746
794
842
mV
Switching response
ts
Tim e required to reach within specified
VPOA value after output is switched
from VPOB ~ VPOE to VPOA
-
0.005
5
ms
Power supply
response
tp
Tim e required reach within specified
VPO2 value after power is turned on
--
80
m s
PO (12)
P hoto m etric
output
*2: Variation in output voltage when load varies
*3: W hen used with a standard visual compensation filter (0.5 mm thick)
*4: W hen peripheral photodiodes are selected
*5: W hen center photodiode is selected
s Equivalent circuit
s Dimensional outline (unit: mm)
2