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參數(shù)資料
| 型號： | S5T8803A01-S0B0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DIODE ZENER SINGLE 200mW 30Vz 4.2mA-Izt 0.05 0.1uA-Ir 23 SOD-323 3K/REEL |
| 中文描述： | 10甲烷鎖相環(huán) |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 109K |
| 代理商： | S5T8803A01-S0B0 |
S5T8803A
10 CH PLL
4
ELECTRICAL CHARACTERISTICS
(Ta = 25
°
C, V
DD
= 5 V, unless otherwise specified)
Characteristic
NOTES:
1.
OSC IN: 10.24MHz X-tal Connection
TIF: 27MHz 150 mVrms
RlF: 42MHz 150 mVrrns
MODE: V
DD
, SB = V
DD
, others are opened
OSC IN: 10.24MHz X-tal Connection
TlF: 27MHz 150rnVrms
RIF: 42MHz 150mVrms
MODE: V
DD
, SB = V
SS
, others are opened
Capacitor more than 2000pF should be connected between V
DD
& V
SS
2.
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Supply Voltage
V
DD
3
5.5
V
Input Voltage
V
IH1
D0 - D3, SB
0.7 V
DD
V
DD
V
V
IL1
D0 - D3, SB
0.3V
DD
V
V
IH2
MODE
0.9 V
DD
V
DD
V
V
IL2
MODE
0.1V
DD
V
f
I1
V
TIF
= 0.15Vrms
10
52
MHz
Input Frequency
f
l2
V
RIF
= 0.15Vrms
30
42
MHz
f
I3
OSC
IN
= 0.3Vrms
5
10.24
11
MHz
V
I(AMP)1
f
TIF
= 52MHz
0.1
0.3V
DD
Vrms
Input Amplitude
V
I(AMP)2
f
RIF
= 42MHz
0.1
0.3V
DD
Vrms
V
I(AMP)3
OSC
IN
= 11MHz
0.3
0.3V
DD
Vrms
Input Current
I
IH
V
IN
= V
DD
40
μ
A
I
IL
V
IN
= V
SS
40
μ
A
Output Voltage
V
OH1
PDT, RDR: I
O
= 0.5mA
V
DD
-1.0
V
V
OL1
PDT, RDR : I
O
= 0.5mA
1.0
V
V
OH2
LDT: I
O
= 1mA
V
DD
-1.0
V
V
OL2
F1: I
O
= 1mA
1.0
V
Output OFF Leakage
Current
I
LKG1
PDT, PDR : V
O
= V
DD
/V
SS
0.01
1.0
μ
A
I
LKG2
LDT: V
O
= V
SS
5.0
μ
A
Standby Current
I
SB1
V
DD
= 3V (Note 2)
1.0
2.0
mA
I
SB2
V
DD
= 3V (Note 2)
3.5
4.0
mA
Operating Current
I
DD1
V
DD
= 3V (Note 1)
2.0
3.0
mA
I
DD2
V
DD
= 5V (Note 1)
6.0
7.0
mA
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