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參數(shù)資料
| 型號： | S5DNF20V |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 20V - 0.030 ohm- 5A SO-8 2.7V - drive STripFET TM II Power MOSFET |
| 中文描述： | N溝道20V的- 0.030歐姆- 5A型的SO - 8 2.7 -驅(qū)動STripFET商標(biāo)二功率MOSFET |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 293K |
| 代理商： | S5DNF20V |
Electrical characteristics
STS5DNF20V
4/12
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Table 4.
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown voltage
I
D
= 250 μA, V
GS
= 0
20
V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
=Max rating,
T
C
=125°C
1
10
μA
μA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 12V
±100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250μA
0.6
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 4.5V, I
D
= 2.5A
V
GS
= 2.7V, I
D
= 2.5A
0.030
0.037
0.040
0.045
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
g
fs (1)
1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 .
Forward transconductance
V
DS
= 15V, I
D
=2.5 A
10
S
C
iss
Input capacitance
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
460
pF
C
oss
Output capacitance
200
pF
C
rss
Reverse transfer
capacitance
50
pF
Q
g
Total gate charge
V
DD
= 16V, I
D
= 5A,
V
GS
= 4.5V
(see Figure 13)
8.5
11.5
nC
Q
gs
Gate-source charge
1.8
nC
Q
gd
Gate-drain charge
2.4
nC
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
=10 V, I
D
=2.5A,
R
G
=4.7
,
V
GS
= 4.5V
(see Figure 12)
7
33
ns
ns
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 10 V, I
D
= 2.5A
R
G
=4.7
,
V
GS
= 4.5V
(see Figure 12)
27
10
ns
ns
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