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參數(shù)資料
| 型號： | S4402 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | MOSFET, Switching; VDSS (V): 600; ID (A): 16; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.475; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN |
| 中文描述： | 泗APD的ヵAPD的1毫米象限 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 86K |
| 代理商： | S4402 |
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2005 Hamamatsu Photonics K.K.
Si APD
S4402
Cat. No. KAPD1002E02
Mar. 200
5
DN
0.07
1
DETAILS OF ACTIVE AREA
(DESIGN DIMENSION)
CASE GND
0
1
4
1
0.45
LEAD
STAND OFF
8.2 ± 0.1
PHOTOSENSITIVE
9.2 ± 0.2
3.5
5.8
WINDOW
3.0 MIN.
0
(Ta=25 C,
λ
=800 nm, M=100)
0.10
POSITION (μm)
R
600
200
400
800
1000
1200
1
10
100
(Typ. Ta=25
C, f=1 MHz)
1 pF
10
-2
REVERSE VOLTAGE
(V)
T
10
0
10
-1
10
1
10
2
10
3
10 pF
100 pF
1 nF
0
50
100
150
200
10
-1
10
0
10
1
10
2
10
3
REVERSE VOLTAGE
(V)
G
(Typ. Ta=25
C)
(Typ. Ta=25
C)
0
200
WAVELENGTH (nm)
P
400
600
800
1000
0.1
0.2
0.3
0.4
0.5
0.6
0.7
I
Dimensional outline (unit: mm)
KAPDA0021EA
I
Spectral response
KAPDB0046EA
I
Dark current vs. reverse voltage
KAPDB0047EA
(Typ. Ta=25
C)
10 pA0
REVERSE VOLTAGE
(V)
D
50
100
150
200
100 pA
1 nA
10 nA
100 nA
I
Terminal capacitance vs. reverse voltage
KAPDB0048EA
I
Gain vs. reverse voltage
KAPDB0049EA
I
Cross-talk example
KAPDB0050EA
2
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