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參數(shù)資料
| 型號(hào)： | S4402 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | MOSFET, Switching; VDSS (V): 600; ID (A): 16; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.475; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN |
| 中文描述： | 泗APD的ヵAPD的1毫米象限 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 86K |
| 代理商： | S4402 |
Features
l
Uniform element characteristics
Quadrant format on one chip with
φ
1 mm active area
ensures uniform characteristics between elements.
l
Single power supply operation
Allows easy and simple operation.
Applications
l
Low-light-level detection
l
Laser beam positioning
P H O T O D I O D E
Si APD
S4402
φ
1 mm quadrant APD
I
General ratings
Parameter
Symbol
-
A
-
Value
Unit
-
mm
mm
2
Window material
Active area size
Effective active area
Borosilicate glass
φ
1 mm/4
0.17 (per 1 element)
I
Absolute maximum ratings
Parameter
Operating temperature
Storage temperature
Symbol
Topr
Tstg
Value
-20 to +60
-55 to +100
Unit
°C
°C
I
Electrical and optical characteristics (Ta=25
°
C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Quantum efficiency
Breakdown voltage
Temperature coefficient of V
BR
Dark current
Symbol
λ
λ
p
S
QE
V
BR
-
I
D
Condition
Min.
-
-
-
-
-
Typ.
Max.
-
-
-
-
200
-
2.0
Unit
nm
nm
A/W
%
V
V/°C
nA
400 to 1000
800
0.5
75
150
0.65
0.4
M=100
λ
=800 nm, M=1
λ
=800 nm, M=1
I
R
=100 μA
M=100
M=100,
λ
=800 nm
R
L
=50
, -3 dB
M=100, f=1 MHz
M=50, f=10 kHz
Io=10 nA
-
Cut-off frequency
fc
-
310
-
MHz
Terminal capacitance
Ct
-
8
-
pF
Excess noise figure
x
-
0.35
-
-
1
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