參數(shù)資料
型號: S4111-16R
廠商: Hamamatsu Photonics
英文描述: MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
中文描述: 硅光電二極管陣列16,35,46元素硅的紫外到近紅外光電二極管陣列
文件頁數(shù): 4/4頁
文件大?。?/td> 139K
代理商: S4111-16R
Si photodiode array
S4111/S4114 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho,
Higashi-ku,
Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesv
gen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 200
6
Hamamatsu Photonics K.K.
Cat. No. KMPD1002E06
Aug. 2006 DN
I
Pin connections
Pin No.
16-element
type
KC
2
4
6
8
10
12
14
16
KC
15
13
11
9
7
5
3
1
35-element
type
KC
2
4
6
8
10
12
14
16
18
NC
20
22
24
26
28
30
32
34
NC
KC
35
33
31
29
27
25
23
21
19
17
15
13
11
9
7
5
3
1
NC
46-element
type
KC
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
KC
45
43
41
39
37
35
33
31
29
27
25
23
21
19
17
15
13
11
9
7
5
3
1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
I
Operating circuits
In the most generally used circuit, operational amplifiers are con-
nected to each channel to read the output in real time. The output of
an operational amplifier is of low impedance and thus can be easily
multiplexed.
In the charge storage readout method, the charge stored in the
junction capacitance of each channel, which is proportional to the
incident light intensity, can be read out in sequence by a multiplexer.
With this method, reverse voltage must be applied to the
photodiodes, so S4111 and S4114 series are suitable. One amplifier
is sufficient but care should be taken regarding noise, dynamic
range, etc.
PHOTODIODE ARRAY
ADDRESS
MULTIPLEXER
BIAS
KMPDC0002EA
PHOTODIODE ARRAY
MULTIPLEXER
KMPDC0001EA
4
相關PDF資料
PDF描述
S4111-35Q Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
S4111-46Q Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
S4114-35Q Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
S4114-46Q Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
S4111 Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
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