參數(shù)資料
型號： S4111-16R
廠商： Hamamatsu Photonics
英文描述： MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
中文描述： 硅光電二極管陣列16，35，46元素硅的紫外到近紅外光電二極管陣列
文件頁數(shù)： 1/4頁
文件大小： 139K
代理商： S4111-16R
S4111/S4114 series
16, 35, 46 element Si photodiode array for UV to NIR
S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs (Dual Inline Packages). These photodiode arrays are primarily
developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all
elements can be used with a reverse bias for charge storage readout, S4111/S4114 series are able to detect low level light with high sensitivity.
Cross-talk between elements is minimized to maintain signal purity. Special filters can be attached as the input window.
P H O T O D I O D E
Si photodiode array
Features
l
Large active area
l
Low cross-talk
l
Wide spectral response range
l
High UV sensitivity
l
Wide linearity
l
S4111 series: Enhanced infrared sensitivity,
low dark current
l
S4114 series: Low terminal capacitance,
high-speed response
Applications
l
Multichannel spectrophotometers
l
Color analyzers
l
Light spectrum analyzers
l
Light position detection
I
General ratings / Absolute maximum ratings
Absolute maximum ratings
Reverse
voltage
V
R
Max.
(V)
Active area
(per 1 element)
Package
Size
Effective
area
(mm
2
)
Between
elements
measure
Between
elements
pitch
Operating
temperature
Topr
(°C)
Storage
temperature
Tstg
(°C)
Type No.
Dimensional
outline/
Window
material *
(mm)
(mm)
(mm)
(mm)
Number
of
elements
S4111-16Q
S4111-16R
S4111-35Q
S4111-46Q
S4114-35Q
S4114-46Q
/Q
/R
/Q
/Q
/Q
/Q
18 pin DIP
1.45 × 0.9
1.305
16
40 pin DIP
48 pin DIP
40 pin DIP
48 pin DIP
35
46
35
46
4.4 × 0.9
3.96
0.1
1.0
15
-20 to +60
-20 to +80
I
Electrical and optical characteristics (Typ. Ta=25 °C, per 1 element, unless otherwise noted)
Photo sensitivity
S
response
range
λ
λ
p
Spectral
Peak
sensitivity
wavelength
λ
p
200 nm 633 nm
Dark current
I
D
Max.
Shunt
resistance
Rsh
V
R
=10 mV
Min
(G
)
Terminal
capacitance
Ct
Rise time
tr
R
L
=1 k
λ
=655 nm
V
R
=0 V
(μs)
NEP
λ
=
λ
p
Type No.
(nm)
190 to 1100
320 to 1100
(nm)
(A/W) (A/W) (A/W)
0.08
-
0.58
V
R
=10 mV
(pA)
V
R
=10 V
(pA)
Typ.
(G
)
V
R
=0 V
(pF)
V
R
=10 V
(pF)
V
R
=10 V
(μs)
V
R
=0 V
(W/Hz
1/2
)
V
R
=10 V
(W/Hz
1/2
)
S4111-16Q
S4111-16R
S4111-35Q
S4111-46Q
S4114-35Q
S4114-46Q
* Window material R: resin coating, Q: quartz glass
0.43
0.39
5
25
2.0
250
200
50
0.5
0.1
4.4 × 10
-16
1.7 × 10
-15
190 to 1100
960
10
50
1.0
30
550
120
1.2
0.3
1.3 × 10
-15
3.1 × 10
-15
190 to 1000
800
0.50
0.08
0.43
60
300
0.15
2
35
20
0.1
0.05
5.7 × 10
-15
8.0 × 10
-15
1
相關(guān)PDF資料
PDF描述
S4111-35Q Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
S4111-46Q Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
S4114-35Q Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
S4114-46Q Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
S4111 Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S41111PINBASE 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RELAIS SOCKEL 170 290 11POL
S4111-35Q 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
S4111-46Q 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
S41-1210 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HIGH VOLTAGE SURFACE MOUNT MLCCS 250 - 5,000 VDC
S4113 制造商:MERKLE-KORFF INDUSTRIES 功能描述:OLD COLMAN P/N: 2445999
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*