參數(shù)資料
型號： S4111-16Q
廠商： Hamamatsu Photonics
英文描述： MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
中文描述： 硅光電二極管陣列16，35，46元素硅的紫外到近紅外光電二極管陣列
文件頁數(shù)： 1/4頁
文件大?。?/td> 139K
代理商： S4111-16Q
S4111/S4114 series
16, 35, 46 element Si photodiode array for UV to NIR
S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs (Dual Inline Packages). These photodiode arrays are primarily
developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all
elements can be used with a reverse bias for charge storage readout, S4111/S4114 series are able to detect low level light with high sensitivity.
Cross-talk between elements is minimized to maintain signal purity. Special filters can be attached as the input window.
P H O T O D I O D E
Si photodiode array
Features
l
Large active area
l
Low cross-talk
l
Wide spectral response range
l
High UV sensitivity
l
Wide linearity
l
S4111 series: Enhanced infrared sensitivity,
low dark current
l
S4114 series: Low terminal capacitance,
high-speed response
Applications
l
Multichannel spectrophotometers
l
Color analyzers
l
Light spectrum analyzers
l
Light position detection
I
General ratings / Absolute maximum ratings
Absolute maximum ratings
Reverse
voltage
V
R
Max.
(V)
Active area
(per 1 element)
Package
Size
Effective
area
(mm
2
)
Between
elements
measure
Between
elements
pitch
Operating
temperature
Topr
(°C)
Storage
temperature
Tstg
(°C)
Type No.
Dimensional
outline/
Window
material *
(mm)
(mm)
(mm)
(mm)
Number
of
elements
S4111-16Q
S4111-16R
S4111-35Q
S4111-46Q
S4114-35Q
S4114-46Q
/Q
/R
/Q
/Q
/Q
/Q
18 pin DIP
1.45 × 0.9
1.305
16
40 pin DIP
48 pin DIP
40 pin DIP
48 pin DIP
35
46
35
46
4.4 × 0.9
3.96
0.1
1.0
15
-20 to +60
-20 to +80
I
Electrical and optical characteristics (Typ. Ta=25 °C, per 1 element, unless otherwise noted)
Photo sensitivity
S
response
range
λ
λ
p
Spectral
Peak
sensitivity
wavelength
λ
p
200 nm 633 nm
Dark current
I
D
Max.
Shunt
resistance
Rsh
V
R
=10 mV
Min
(G
)
Terminal
capacitance
Ct
Rise time
tr
R
L
=1 k
λ
=655 nm
V
R
=0 V
(μs)
NEP
λ
=
λ
p
Type No.
(nm)
190 to 1100
320 to 1100
(nm)
(A/W) (A/W) (A/W)
0.08
-
0.58
V
R
=10 mV
(pA)
V
R
=10 V
(pA)
Typ.
(G
)
V
R
=0 V
(pF)
V
R
=10 V
(pF)
V
R
=10 V
(μs)
V
R
=0 V
(W/Hz
1/2
)
V
R
=10 V
(W/Hz
1/2
)
S4111-16Q
S4111-16R
S4111-35Q
S4111-46Q
S4114-35Q
S4114-46Q
* Window material R: resin coating, Q: quartz glass
0.43
0.39
5
25
2.0
250
200
50
0.5
0.1
4.4 × 10
-16
1.7 × 10
-15
190 to 1100
960
10
50
1.0
30
550
120
1.2
0.3
1.3 × 10
-15
3.1 × 10
-15
190 to 1000
800
0.50
0.08
0.43
60
300
0.15
2
35
20
0.1
0.05
5.7 × 10
-15
8.0 × 10
-15
1
相關(guān)PDF資料
PDF描述
S4111-16R MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
S4111-35Q Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
S4111-46Q Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
S4114-35Q Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
S4114-46Q Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S4111-16R 制造商:HAMAMATSU 功能描述:PHOTODIODE 960NM 18-DIP
S41111PINBASE 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RELAIS SOCKEL 170 290 11POL
S4111-35Q 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
S4111-46Q 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
S41-1210 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HIGH VOLTAGE SURFACE MOUNT MLCCS 250 - 5,000 VDC
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