參數(shù)資料
型號(hào)： S3584-06
元件分類(lèi)： 光敏二極管
英文描述： PIN PHOTO DIODE
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 127K
代理商： S3584-06
Si PIN photodiode
S3204/S3584 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2006 Hamamatsu Photonics K.K.
s
s Dimensional outlines (unit: mm)
S3204 series
S3584 series
10 nA
10 A
1 A
1 pA
100 pA
1 nA
100 nA
10 pA
DARK
CURRENT
(Typ.)
AMBIENT TEMPERATURE (C)
-20
60
80
020
40
S3584-08/-09 (VR=70 V)
S3204-08/-09 (VR=70 V)
S3584-05/-06 (VR=100 V)
S3204-05/-06 (VR=100 V)
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
10 pF
0.1
1
10
1000
100
100 pF
1 nF
10 nF
(Typ. Ta=25 C, f=1 MHz)
S3584-08/-09
S3204-05/-06
S3204-08/-09
S3584-05/-06
0
TEMPERATURE
COEFFICIENT
(
%
/
C)
200
400
600
800
1000
+1.0
+0.5
(Typ.)
+1.5
-0.5
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
0
200
400
600
0.1
0.2
0.3
0.4
0.5
800
1200
1000
0.6
0.7
(Typ. Ta=25 C)
S3204/S3584-08
S3204/S3584-05
KPINA0040EB
KPINA0041EB
s Spectral response
KPINB0227EA
KPINB0093EC
s Dark current vs. ambient
temperature
sPhotosensitivitytemperaturecharacteristic
s Dark current vs. reverse voltage
s Terminal capacitance vs. reverse voltage
REVERSE VOLTAGE (V)
DARK
CURRENT
0.1
1
10
1000
100
100 pA
1 nA
100 nA
10 nA
(Typ. Ta=25 C)
S3584-08/-09
S3204-05/-06
S3204-08/-09
S3584-05/-06
Cat. No. KPIN1051E05
Mar. 2006 DN
KPINB0228EB
KPINB0229EB
KPINB0230EB
WHITE CERAMIC
ACTIVE AREA
0.45
LEAD
18.0
3.4
25.5
18.0
25.5
PHOTOSENSITIVE
SURFACE
10
2.54
±
0.2
a
5.0
±
0.2
Type No.
S3204-05/-06 1.0
1.2
a
S3204-08/-09
1.75
+
0 -0.6
+0
-0.6
WHITE CERAMIC
0.45
LEAD
+
0 -0.8
+0
-0.8
3.4
28.0
35.6
1.75
10
2.54
±
0.2
28.0
ACTIVE AREA
PHOTOSENSITIVE
SURFACE
35.6
a
5.0
±
0.2
Type No.
S3584-05/-06 1.0
1.2
a
S3584-08/-09
s Spectral response (without window)
KPINB0264EA
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
0
200
400
600
0.1
0.2
0.3
0.4
0.5
800
1200
1000
0.6
0.7
(Typ. Ta=25 C)
S3204/S3584-09
S3204/S3584-06
2
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