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參數(shù)資料
| 型號(hào)： | S4111-35Q |
| 元件分類(lèi)： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 封裝： | CERAMIC, DIP-40 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 133K |
| 代理商： | S4111-35Q |
S4111/S4114 series
S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs (Dual Inline Packages). These photodiode arrays are primarily
developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all
elements can be used with a reverse bias for charge storage readout, S4111/S4114 series are able to detect low level light with high sensitivity.
Cross-talk between elements is minimized to maintain signal purity. Special filters can be attached as the input window.
PHOTODIODE
Si photodiode array
16, 35, 46 element Si photodiode array for UV to NIR
Features
l Large active area
l Low cross-talk
l Wide spectral response range
l High UV sensitivity
l Wide linearity
l S4111 series: Enhanced infrared sensitivity,
low dark current
l S4114 series: Low terminal capacitance,
high-speed response
Applications
l Multichannel spectrophotometers
l Color analyzers
l Light spectrum analyzers
l Light position detection
s General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area
(per 1 element)
Package
Size
Effective
area
Betw een
ele m e nts
m eas ur e
Betw een
ele m e nts
pitch
Reverse
voltage
VR Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Di me nsional
outline/
Wi ndo w
material *
(mm)
(mm
2)
(mm)
Nu m b er
of
ele m e nts
(V)
(°C)
S4111-16Q
/Q
S4111-16R
/R
18 pin DIP 1.45 × 0.9 1.305
16
S4111-35Q
/Q
40 pin DIP
35
S4111-46Q
/Q
48 pin DIP
46
S4114-35Q
/Q
40 pin DIP
35
S4114-46Q
/Q
48 pin DIP
4.4 × 0.9
3.96
0.1
1.0
46
15
-20 to +60
-20 to +80
s Electrical and optical characteristics (Typ. Ta=25 °C, per 1 element, unless otherwise noted)
Photo sensitivity
S
Spectral
response
range
λ
Peak
sensitivity
wavelength
λp
λp 200 nm 633 nm
Dark current
ID
Max.
Shunt
resistance
Rsh
VR=10 mV
Terminal
capacitance
Ct
Rise time
tr
RL=1 k
λ=655 nm
NEP
λ=λp
Type No.
(nm)
(A/W) (A/W) (A/W)
VR=10 m V
(pA)
VR=10 V
(pA)
Min
(G
)
Typ.
(G
)
V R=0 V
(pF)
V R=10 V
(pF)
V R=0 V
(s)
VR=10 V
(s)
V R=0 V
(W/Hz1/2)
VR=10 V
(W/Hz1/2)
S4111-16Q
190 to 1100
0.08
0.43
S4111-16R
320 to 1100
-0.39
5
25
2.0
250
200
50
0.5
0.1
4.4 × 10-161.7 × 10-15
S4111-35Q
S4111-46Q
190 to 1100
960
0.58
10
50
1.0
30
550
120
1.2
0.3
1.3 × 10-153.1 × 10-15
S4114-35Q
S4114-46Q
190 to 1000
800
0.50
0.08
0.43
60
300
0.15
2
35
20
0.1
0.05 5.7 × 10
-15 8.0 × 10-15
* Window material R: resin coating, Q: quartz glass
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S4111-46Q | 制造商:HAMAMATSU 制造商全稱(chēng):Hamamatsu Corporation 功能描述:Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR |
| S41-1210 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:HIGH VOLTAGE SURFACE MOUNT MLCCS 250 - 5,000 VDC |
| S4113 | 制造商:MERKLE-KORFF INDUSTRIES 功能描述:OLD COLMAN P/N: 2445999 |
| S4114 | 制造商:MERKLE-KORFF INDUSTRIES 功能描述:OLD COLMAN P/N: 2446020 |
| S4114-35Q | 制造商:HAMAMATSU 制造商全稱(chēng):Hamamatsu Corporation 功能描述:Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR |
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