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參數(shù)資料
| 型號： | S3510 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Power Rectifier |
| 中文描述： | 70 A, SILICON, RECTIFIER DIODE, DO-5 |
| 文件頁數(shù)： | 8/13頁 |
| 文件大?。?/td> | 221K |
| 代理商： | S3510 |
SLVS312A
–
JULY 2000
–
REVISED DECEMBER 2002
8
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating conditions (unless otherwise noted)
overvoltage protection
PARAMETER
TEST CONDITIONS
MIN
3.7
TYP
3.9
MAX
4.1
UNIT
VS33
Overvoltage threshold
VS5
5.7
6.1
6.5
V
VDD
13.2
13.8
14.4
ILKG
VOL
Leakage current (FPO)
V(FPO) = 5 V
5
μ
A
V
μ
s
Low-level output voltage (FPO)
VDD = 5 V, Isink = 20 mA
VDD = 5 V
0.7
Noise deglitch time OVP
35
73
110
PGI and PGO
PARAMETER
TEST CONDITIONS
MIN
1.1
TYP
1.15
MAX
1.2
UNIT
VPGI
Inp t threshold oltage (PGI)
Input threshold voltage (PGI)
PGI1
V
PGI2
0.9
0.95
1
VIT
Under oltage threshold
Undervoltage threshold
VS33
2
2.2
2.4
V
VS5
3.3
3.5
3.7
ILKG
VOL
Leakage current (PGO)
PGO = 5 V
5
μ
A
V
Low-level output voltage (PGO)
VDD = 4 V,
Isink = 10 mA
0.4
Short-circuit protection delay
3.3 V, 5 V
49
75
114
ms
TP3510
PGI to PGO
200
300
450
td1
Delay time
TP3511
VDD = 5 V
VDD 5 V
100
150
225
ms
PGI to FPO
3.2
4.8
7.2
PGI to PGO
88
150
225
Noise deglitch time
PGI to FPO
VDD = 5 V
VDD 5 V
180
296
445
μ
s
UVP to FPO
82
146
220
PSON control
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
μ
A
V
II
VIH
VIL
tb
td2
Input pullup current
PSON = 0 V
120
High-level input voltage
2.4
Low-level input voltage
1.2
V
Debounce time (PSON)
VDD = 5 V
VDD = 5 V
24
38
57
ms
Delay time (PSON to FPO)
tb+1.1
tb+2.3
tb+4
ms
total device
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IDD
Supply current
PSON = 5 V
1
mA
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