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參數(shù)資料
| 型號： | S350P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Phototransistor(用于檢測器，集電極電流50mA的NPN光晶體管) |
| 中文描述： | 硅npn型光電晶體管（用于檢測器，集電極電流為50mA的npn型光晶體管） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 75K |
| 代理商： | S350P |
S350P
Vishay Telefunken
3 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81543
94 8239
0
0.6
0.8
1.0
1.2
1.4
2.0
I
c
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
100
1.6
1.8
V
CE
=5V
E
e
=1mW/cm
2
=950nm
Figure 3. Relative Collector Current vs.
Ambient Temperature
0.01
0.1
1
0.001
0.01
0.1
1
10
I
c
E
e
– Irradiance ( mW/cm
2
)
10
94 8255
V
CE
=5V
=950nm
Figure 4. Collector Light Current vs. Irradiance
0.1
1
10
0.01
0.1
1
10
I
c
V
CE
– Collector Emitter Voltage ( V )
100
94 8256
=950nm
E
e
=1mW/cm
2
0.5mW/cm
2
0.2mW/cm
2
0.1mW/cm
2
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
0.1
1
10
0
4
8
12
16
20
C
C
V
CE
– Collector Emitter Voltage ( V )
100
94 8247
f=1MHz
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
0
4
8
12
16
94 8253
0
2
4
6
8
12
t
o
I
C
– Collector Current ( mA )
10
o
V
CE
=5V
R
L
=100
=950nm
t
off
t
on
Figure 7. Turn On/Turn Off Time vs. Collector Current
700
800
900
1000
1100
94 8261
0
0.2
0.4
0.6
0.8
1.0
S
r
– Wavelength ( nm )
Figure 8. Relative Spectral Sensitivity vs. Wavelength
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S350P | Silicon NPN Phototransistor |
| S391D | Silicon PIN Diode |
| S392 | Silicon PIN Diode |
| S392D | Silicon PIN Diode |
| S397D | Schottky Barrier Rectifier |
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| S35100 | 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 1KV 70A 2PIN DO-203AB - Bulk |
| S-3510ACFJ | 制造商:SII 制造商全稱:Seiko Instruments Inc 功能描述:REAL-TIME CLOCK |
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