- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374663 > S29PL127J60 (Spansion Inc.) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control PDF資料下載
參數(shù)資料
| 型號： | S29PL127J60 |
| 廠商： | Spansion Inc. |
| 英文描述： | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | 3.0伏的CMOS只，同步讀/寫閃存與增強VersatileIO控制記憶 |
| 文件頁數(shù)： | 25/106頁 |
| 文件大?。?/td> | 1997K |
| 代理商： | S29PL127J60 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁當(dāng)前第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁
April 7, 200531107A62
S29PL127J/S29PL129J/S29PL064J/S29PL032J
23
P R E L I M I N A R Y
Simultaneous Read/Write Operation
In addition to the conventional features (read, program, erase-suspend read, and
erase-suspend program), the device is capable of reading data from one bank of
memory while a program or erase operation is in progress in another bank of
memory (simultaneous operation). The bank can be selected by bank addresses
(PL127J: A22–A20, PL129J and PL064J: A21–A19, PL032J: A20–A18) with zero
latency.
The simultaneous operation can execute multi-function mode in the same bank.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data
to the device and erasing sectors of memory), the system must drive WE# and
CE# (CE1# or CE#2 in PL129J) to V
IL
, and OE# to V
IH
.
The device features an
Unlock Bypass
mode to facilitate faster programming.
Once a bank enters the Unlock Bypass mode, only two write cycles are required
to program a word, instead of four. The “Word Program Command Sequence”
section has details on programming data to the device using both standard and
Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device.
Table 4
indicates the set of address space that each sector occupies. A “bank ad-
dress” is the set of address bits required to uniquely select a bank. Similarly, a
“sector address” refers to the address bits required to uniquely select a sector.
The “Command Definitions” section has details on erasing a sector or the entire
chip, or suspending/resuming the erase operation.
Word 6
1
1
0
Word 7
1
1
1
Table 4.
Bank Select
Bank
PL127J: A22–A20
PL064J: A21–A19
PL032J: A20–A18
Bank A
000
Bank B
001, 010, 011
Bank C
100, 101, 110
Bank D
111
Bank
CE1#
CE2#
PL129J: A21–A20
Bank 1A
0
1
00
Bank 1B
0
1
01, 10, 11
Bank 2A
1
0
00, 01, 10
Bank 2B
1
0
11
Table 3.
Page Select
(Continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29PL127J65 | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J70 | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S2A_1 | 2.0 AMPS. Surface Mount Rectifiers |
| S2K | 2.0 AMPS. Surface Mount Rectifiers |
| S2M | 2.0 AMPS. Surface Mount Rectifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL127J60BAI000 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 8MX16 60NS 80FBGA - Bulk |
| S29PL127J60BFI000 | 制造商:Spansion 功能描述:FLASH PARALLEL - Bulk |
| S29PL127J60TAI130 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 8MX16 60NS 56TSOP - Trays |
| S29PL127J60TFI130 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 8M x 16 60ns 56-Pin TSOP Tray |
| S29PL127J65 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。