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參數資料
| 型號： | S29NS128N0SBJW002 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| 中文描述： | 8M X 16 FLASH 1.8V PROM, 80 ns, PBGA44 |
| 封裝： | 9.20 X 8 MM, LEAD FREE, FBGA-44 |
| 文件頁數： | 3/86頁 |
| 文件大小： | 1036K |
| 代理商： | S29NS128N0SBJW002 |
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This document contains information on one or more products under development at Spansion LLC. The information is intended to help you evaluate this product. Do not design
in this product without contacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed product without notice.
Publication Number
S29NS-N_00
Revision
A
Amendment
12
Issue Date
June 13, 2006
Distinctive Characteristics
Single 1.8V read, program and erase (1.70V to 1.95V)
VersatileIO Feature
– Device generates data output voltages and tolerates data input
voltages as determined by the voltage on the V
CCQ
pin
– 1.8V compatible I/O signals
Multiplexed Data and Address for reduced I/O count
– A15–A0 multiplexed as DQ15–DQ0
– Addresses are latched by AVD# control input when CE# low
Simultaneous Read/Write operation
– Data can be continuously read from one bank while executing
erase/program functions in other bank
– Zero latency between read and write operations
Read access times at 80/66 MHz
– Burst access times of 9/11 ns at industrial temperature range
– Asynchronous random access times of 80 ns
– Synchronous random access times of 80 ns
Burst length
– Continuous linear burst
– 8/16/32 word linear burst with wrap around
– 8/16/32 word linear burst without wrap around
Secured Silicon Sector region
– 256 words accessible through a command sequence
– 128 words for the Factory Secured Silicon Sector
– 128 words for the Customer Secured Silicon Sector
Power dissipation (typical values: 8 bits switching,
C
L
= 30 pF) @ 80 MHz
– Continuous Burst Mode Read: 28 mA (at 66MHz)
– Simultaneous Operation: 50 mA
– Program/Erase: 19 mA
– Standby mode: 20 μA
Sector Architecture
– Four 16 K word sectors (S29NS256N and S29NS128N) and four 8K
word sectors (S29NS064N) in upper-most address range
– Two-hundred-fifty-five 64-Kword sectors (S29NS256N), one-
hundred-twenty-seven 64-Kword sectors (S29NS128N) and one
hundred twenty-seven 32Kword sectors (S29NS064N)
– Sixteen banks (S29NS128N and S29NS256N) and eight banks
(S29NS064N)
High Performance
– Typical word programming time of 40 μs
– Typical effective word programming time of 9.4 μs utilizing a
32-Word Write Buffer at V
CC
Level
– Typical effective word programming time of 6 μs utilizing a 32-Word
Write Buffer at ACC Level
– Typical sector erase time of 150 ms for 16 Kword sectors and
800 ms sector erase time for 64 Kword sectors
Security features
Persistent Sector Protection
– A command sector protection method to lock combinations of
individual sectors to prevent program or erase operations within that
sector
– Sectors can be locked and unlocked in-system at V
CC
level
Password Sector Protection
– A sophisticated sector protection method to lock combinations of
individual sectors to prevent program or erase operations within that
sector using a user-defined 64-bit password
Hardware Sector Protection
– WP# protects the two highest sectors
– All sectors locked when ACC = V
IL
Handshaking feature
– Provides host system with minimum possible latency by monitoring
RDY
Supports Common Flash Memory Interface (CFI)
Software command set compatible with JEDEC 42.4
standards
– Backwards compatible with Am29F and Am29LV families
Manufactured on 110 nm MirrorBit
TM
process technology
Cycling endurance: 100,000 cycles per sector typical
Data retention: 20 years typical
Data# Polling and toggle bits
– Provides a software method of detecting program and erase
operation completion
Erase Suspend/Resume
– Suspends an erase operation to read data from, or program data to,
a sector that is not being erased, then resumes the erase operation
Program Suspend/Resume
– Suspends a programming operation to read data from a sector other
than the one being programmed, then resume the programming
operation
Unlock Bypass Program command
– Reduces overall programming time when issuing multiple program
command sequences
Packages
– 48-ball Very Thin FBGA (S29NS256N)
– 44-ball Very Thin FBGA (S29NS128N, S29NS064N)
S29NS-N MirrorBit Flash Family
S29NS256N, S29NS128N, S29NS064N
256/128/64 Megabit (16/8/4M x 16-bit), CMOS 1.8 Volt-only
Simultaneous Read/Write, Multiplexed, Burst Mode
Flash Memory
Data Sheet
(Advance Information)
相關PDF資料 |
PDF描述 |
|---|---|
| S29NS128N0SBJW003 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS256N0PBJW000 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS256N0PBJW002 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS256N0PBJW003 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS256N0SBJW000 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S29NS128N0SBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS128P | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29NS128P0PBJW000 | 功能描述:閃存 128M (8MX16) 66MHz Simultaneous R/W RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29NS128P0PBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29NS128P0SBJW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
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