參數(shù)資料
型號(hào)： S29NS064N0PBJW002
廠商： SPANSION LLC
元件分類： DRAM
英文描述： Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
中文描述： 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA44
封裝： 7.70 X 6.20 MM, LEAD FREE, FBGA-44
文件頁(yè)數(shù)： 53/86頁(yè)
文件大?。?/td> 1036K
代理商： S29NS064N0PBJW002
S29NS-N_00_A12 June 13, 2006
S29NS-N MirrorBit Flash Family
51
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
The
Non-Volatile Sector Protection Command Set Exit
command
must
be issued after the execution of
the commands listed previously to reset the device to read mode. Note that issuing the
Non-Volatile Sector
Protection Command Set Exit
command re-enables
reads and writes for Active Bank.
After entering the PPB Mode
The PPB Status Read (BA) is the Mode entry (BA)
If PPB Program command is given, the new PPB Status Read (BA) will be the same (BA) as given in the
PPB Program.
If PPB Erase command is given, the new PPB Status Read (BA) is the same (BA) as given in the PPB
Program or PPB Set Entry, whichever was last.
During PPB Program or Erase Operation, PPB status read is not available. Only polling data is available in
Bank0 and no other bank. Reading from all other banks will give core data.
11.14 Global Volatile Sector Protection Freeze Command Set
The Global Volatile Sector Protection Freeze Command Set permits the user to set the PPB Lock Bit and
reading the logic state of the PPB Lock Bit.
The
Volatile Sector Protection Freeze Command Set Entry
command sequence must be issued prior to
any of the commands listed following to enable proper command execution.
Reads from all banks excluding mode entry bank are allowed.
PPB Lock Bit Set Command
PPB Lock Bit Status Read Command
The PPB Lock Bit Set command is used to set the PPB Lock bit if it is cleared either at reset or if the
Password Unlock command was successfully executed. There is no PPB Lock Bit Clear command. Once the
PPB Lock Bit is set, it cannot be cleared unless the device is taken through a power-on clear (for Persistent
Sector Protection Mode) or the Password Unlock command is executed (for Password Sector Protection
Mode). If the Password Mode Locking Bit is set, the PPB Lock Bit status is reflected as set, even after a
power-on reset cycle.
The programming state of the PPB Lock Bit can be verified by executing a PPB Lock Bit Status Read
Command to the device.
The
Global Volatile Sector Protection Freeze Command Set Exit
command must be issued after the
execution of the commands listed previously to reset the device to read mode.
11.15 Volatile Sector Protection Command Set
The Volatile Sector Protection Command Set permits the user to set the Dynamic Protection Bit (DYB), clear
the Dynamic Protection Bit (DYB), and read the logic state of the Dynamic Protection Bit (DYB).
The
Volatile Sector Protection Command Set Entry
command sequence must be issued prior to any of the
commands listed following to enable proper command execution.
Note that issuing the
Volatile Sector Protection Command Set Entry
command disables reads and writes
for the bank selected with the command. Reads for other banks excluding the selected bank are allowed.
DYB Set Command
DYB Clear Command
DYB Status Read Command
The DYB Set/Clear command is used to set or clear a DYB for a given sector. The high order address bits
(A23–A14 for the NS256N, A22–A14 for the NS128N and A21-A14 for the NS064N) are issued at the same
time as the code 00h or 01h on DQ7-DQ0. All other DQ data bus pins are ignored during the data write cycle.
The DYBs are modifiable at any time, regardless of the state of the PPB or PPB Lock Bit. The DYBs are set
at power-up or hardware reset.
The programming state of the DYB for a given sector can be verified by writing a DYB Status Read Command
to the device.
Note that DYB reads data only asynchronously.
相關(guān)PDF資料
PDF描述
S29NS064N0PBJW003 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS064N0SBJW000 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS064N0SBJW002 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS064N0SBJW003 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29NS064N0PBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS064N0SBJW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS064N0SBJW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS064N0SBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS128J0LBAW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
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