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參數(shù)資料
| 型號： | S29GL128N90FAIV10 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| 中文描述： | 8M X 16 FLASH 3V PROM, 90 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1MM PITCH, FBGA-64 |
| 文件頁數(shù)： | 99/100頁 |
| 文件大?。?/td> | 952K |
| 代理商： | S29GL128N90FAIV10 |
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S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit Flash Family
97
D a t a S h e e t
Advance I nformation on S9GL-P AC Characteristics
Changed speed specifications and units of measure for t
READY
, t
RP
, t
RH
, and t
RPD
. Changed
specifications on t
READY
from maximum to minimum.
Revision A9 (June 15, 2005)
Ordering I nformation table
Added note to temperature range.
Valid Combinations table
Replaced table.
DC Characteristics table
Replaced V
IL
lines for I
CC4
, I
CC5
, I
CC6
.
Connection Diagrams
Modified 56-Pin Standard TSOP (pg 8). Modified 64-ball Fortified BGA.
Advance I nformation on S9GL-P AC Characteristics
Added second table.
Revision B0 (April 22, 2006)
Global
Changed document status to Full Production.
Ordering I nformation
Changed description of “A” for Package Materials Set. Modified S29GL128N Valid Combina-
tions table.
S29GL128N Sector Address Table
Corrected bit range values for A22–A16.
Persistent Protection Bit ( PPB)
Corrected typo in second sentence, second paragraph.
Secured Silicon Sector Flash Memory Region
Deleted note at end of second paragraph.
Customer Lockable: Secured Silicon Sector NOT Programmed or Protected At the
Factory
Modified 1st bullet text.
W rite Protect ( W P# )
Modified third paragraph.
Device Geometry Definition table
Changed 1st x8 address for Erase Block Region 2.
W ord Program Command Sequence
Modified fourth paragraph.
W rite Buffer Programming
Deleted note from eighth paragraph.
Program Suspend/ Program Resume Command Sequence
Corrected typos in first paragraph.
Lock Register Command Set Definitions
Modified fifth paragraph.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL128N90FAIV12 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N90FAIV13 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N90FAIV20 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N90FAIV22 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N90FAIV23 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128N90FFIR10 | 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 128M-Bit 16M x 8/8M x 16 90ns 64-Pin Fortified BGA Tray |
| S29GL128N90FFIR20 | 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 128M-Bit 16M x 8/8M x 16 90ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 128Mbit 16M/8M x 8bit/16bit 90ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:Flash - NOR IC |
| S29GL128N90TAIR10 | 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 128M-Bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray |
| S29GL128N90TAIR20 | 制造商:Spansion 功能描述: |
| S29GL128N90TFAR23 | 制造商:Spansion 功能描述: |
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