參數(shù)資料
型號: S29GL128N11FFIV10
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述: 8M X 16 FLASH 3V PROM, 110 ns, PBGA64
封裝: 13 X 11 MM, LEAD FREE, FBGA-64
文件頁數(shù): 95/100頁
文件大?。?/td> 952K
代理商: S29GL128N11FFIV10
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit Flash Family
93
D a t a S h e e t
Revision A2 (January 22, 2004)
Lock Register
Corrected and added new text for Secured Silicon Sector Protection Bit, Persistent Protection
Mode Lock Bit, and Password Protection Mode Lock Bit.
Persistent Sector Protection
Persistent Protection Bit (PPB): Added the second paragraph text about programming the PPB
bit.
Persistent Protection Bit Lock (PPB Lock Bit): Added the second paragraph text about config-
uring the PPB Lock Bit, and fourth paragraph on Autoselect Sector Protection Verification.
Added PPB Lock Bit requirement of 200ns access time.
Passw ord Sector Protection
Corrected 1 μs (built-in delay for each password check) to 2 μs.
Lock Register Command Set Definitions
Added new information for this section.
Passw ord Protection Command Set Definitions
Added new information for this section.
Non-Volatile Sector Protection Command Set Definitions
Added new information for this section.
Global Volatile Sector Protection Freeze Command Set
Added new information for this section.
Volatile Sector Protection Command Set
Added new information for this section.
Secured Silicon Sector Entry Command
Added new information for this section.
Secured Silicon Sector Exit Command
Added new information for this section.
Revision A3 (March 2, 2004)
Connection Diagrams
Removed 56-pin reverse TSOP diagram.
Ordering I nformation
Updated the Standard Products for the S29GL512/256/128N devices and modified the valid
combinations tables.
W ord Program Command Sequence
Added new information to this section.
Lock Register Command Set Definitions
Added new information to this section.
Table 13
Updated this table.
相關(guān)PDF資料
PDF描述
S29GL128N11FFIV12 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FFIV13 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FFIV20 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11TFIV13 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11TFIV20 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
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