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參數(shù)資料
| 型號(hào)： | S29GL128N11FFIV10 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| 中文描述： | 8M X 16 FLASH 3V PROM, 110 ns, PBGA64 |
| 封裝： | 13 X 11 MM, LEAD FREE, FBGA-64 |
| 文件頁(yè)數(shù)： | 94/100頁(yè) |
| 文件大小： | 952K |
| 代理商： | S29GL128N11FFIV10 |
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92
S29GL-N MirrorBit Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a S h e e t
Revision Summary
Revision A (September 2, 2003)
Initial Release.
Revision A1 (October 16, 2003)
Global
Added LAA064 package.
Distinctive Characteristics, Performance Characteristics
Clarified fifth bullet information.
Added RTSOP to Package Options.
Distinctive Characteristics, Softw are and Hardw are Features
Clarified
Password Sector Protection
to
Advanced Sector Protection
Connection Diagrams
Removed Note.
Ordering I nformation
Modified Package codes
Device Bus Operations, Table 1
Modified Table, removed Note.
Sector Address Tables
All address ranges doubled in all sector address tables.
Sector Protection
Lock Register: Corrected text to reflect 3 bits instead of 4.
Table 6, Lock Register: Corrected address range from DQ15-5 to DQ15-3; removed DQ4 and
DQ3; Corrected DQ15-3 Lock Register to Don’t Care.
Table 7, Sector Protection Schemes: Corrected Sector States.
Command Definitions
Table 12, Command Definitions, x16
Nonvolatile Sector Protection Command Set Entry Second Cycle Address corrected from 55
to 2AA.
Legend: Clarified PWDx, DATA
Notes: Clarified Note 19.
Table 13, Command Definitions, x8
Password Read and Unlock Addresses and Data corrected.
Legend: Clarified PWDx, DATA
Notes: Clarified Note 19.
Test Conditions
Table 17 on page 75
, Test Specifications and
Figure 10, on page 76
, Input Waveforms and
Measurement Levels: Corrected Input Pulse Levels to 0.0–VIO; corrected Input timing mea-
surement reference levels to 0.5V
IO
.
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| S29GL128N11FFIV12 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
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| S29GL128N11FFIV20 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N11TFIV13 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N11TFIV20 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128N11FFIV20 | 制造商:Spansion 功能描述:Flash - NOR IC |
| S29GL128N11FFVR10 | 制造商:Spansion 功能描述:FLASH PARALLEL 3.3V 128MBIT 16MX8/8MX16 110NS 56TSOP - Trays |
| S29GL128N11TAI010 | 制造商:Spansion 功能描述:SPZS29GL128N11TAI010 FLSH MEM EOL161008 |
| S29GL128N11TFA020 | 制造商:Spansion 功能描述: |
| S29GL128N11TFI010H | 制造商:Spansion 功能描述: |
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