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| 型號(hào)： | S29GL064M90TAIR73 |
| 廠商： | SPANSION LLC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| 中文描述： | 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | MO-142EC, TSOP-48 |
| 文件頁(yè)數(shù)： | 80/116頁(yè) |
| 文件大小： | 1656K |
| 代理商： | S29GL064M90TAIR73 |
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78
S29GL-M MirrorBit
TM
Flash Family
S29GL-M_00_B6 October 10, 2006
D a t a S h e e t
DC Characteristics
CMOS Compatible
Notes:
1.
2.
3.
4.
5.
6.
7.
On the WP#/ACC pin only, the maximum input load current when WP# = V
IL
is ± 5.0 μA.
The I
current listed is typically less than 3.5 mA/MHz, with OE# at V
IH
.
Maximum I
specifications are tested with V
CC
= V
CC
max.
S29GL032M, S29GL064M
S29GL128M, S29GL256M
I
active while Embedded Erase or Embedded Program is in progress.
Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30
ns.
V
voltage requirements.
Not 100% tested.
8.
9.
Parameter
Symbol
Parameter Description
( Notes)
Test Conditions
Min
Typ
Max
Uni
t
I
LI
Input Load Current (
1
)
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
±
1.0
μA
I
LIT
A9, ACC Input Load Current
V
CC
= V
CC max
; A9 = 12.5 V
35
μA
I
LR
Reset Leakage Current
V
CC
= V
CC max
; RESET# = 12.5 V
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
35
μA
I
LO
Output Leakage Current
±
1.0
μA
I
CC1
V
CC
Initial Read Current (
2
,
3
)
CE# = V
IL,
OE# = V
IH
1 MHz
5
20
mA
5 MHz (4)
18
25
5 MHz (5)
25
35
10 MHz (4)
35
50
10 MHz (5)
40
60
I
CC2
V
CC
Intra-Page Read Current (
2
,
3
)
CE# = V
IL,
OE# = V
IH
10 MHz
5
20
mA
40 MHz
10
40
I
CC3
V
CC
Active Write Current (
3
,
4
)
CE# = V
IL,
OE# = V
IH
CE#, RESET# = V
CC
±
0.3 V,
WP# = V
IH
RESET# = V
SS
±
0.3 V, WP# = V
IH
V
= V
CC
±
0.3 V;
-0.1< V
IL
≤
0.3 V, WP# = V
IH
50
60
mA
I
CC4
V
CC
Standby Current (
3
)
1
5
μA
I
CC5
V
CC
Reset Current (
3
)
1
5
μA
I
CC6
Automatic Sleep Mode (
3
,
7
)
1
5
μA
V
IL
Input Low Voltage (
1
,
8
)
–0.5
0.8
V
V
IH
Input High Voltage
1
,
8
)
0.7 V
CC
V
CC
+ 0.5
V
V
HH
Voltage for ACC Program Acceleration
V
CC
= 2.7 –3.6 V
11.5
12.0
12.5
V
V
ID
Voltage for Autoselect and
Temporary Sector Unprotect
V
CC
= 2.7 –3.6 V
11.5
12.0
12.5
V
V
OL
Output Low Voltage (
8
)
I
OL
= 4.0 mA, V
CC
= V
CC min
0.45
V
V
OH1
Output High Voltage
I
OH
= –2.0 mA, V
CC
= V
CC min
0.85 V
CC
V
V
OH2
I
OH
= –100 μA, V
CC
= V
CC min
V
CC
–0.4
V
V
LKO
Low V
CC
Lock-Out Voltage (
9
)
2.3
2.5
V
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| S29GL064M90TAIR80 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR82 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR83 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR90 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TBIR90 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL064M90TFIR20 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray |
| S29GL064M90TFIR30 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray |
| S29GL064M90TFIR4 | 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC |
| S29GL064M90TFIR40 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,4MX16/8MX8,CMOS,TSSOP,48PIN,PLASTIC |
| S29GL064M90TFIR60 | 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 64M-Bit 4M x 16 90ns 48-Pin TSOP Tray |
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