參數(shù)資料
型號： S29GL01GP12TFI012
廠商： Spansion Inc.
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 3.0伏只頁面模式閃存具有90納米MirrorBit工藝技術(shù)
文件頁數(shù)： 56/71頁
文件大?。?/td> 990K
代理商： S29GL01GP12TFI012
54
S29GL-P MirrorBit
TM
Flash Family
S29GL-P_00_A3 November21,2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Figure 11.8
Power-up Sequence Timings
11.7.3
S29GL-P Erase and Program Operations
Notes
1. Not 100% tested.
2. See
Section 11.6
for more information.
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 110 ns speed option are tested with
V
IO
= V
CC
= 2.7 V. AC specifications for 110 ns speed options are tested with V
IO
= 1.8 V and V
CC
= 3.0 V.
6. Write Cycle Time = Access Time at V
CC
.
V
CC
min
V
CC
V
IO
min
V
IO
CE#
RESET#
t
RH
t
VIOS
t
VCS
Table 11.6
S29GL-P Erase and Program Operations
Parameter
JEDEC
Description
Unit
Speed Options
120
Unit
Std.
110
110
130
t
AVAV
t
WC
Write Cycle Time
(Note 1)
Min
(Note 6)
120
130
ns
t
AVWL
t
AS
t
ASO
t
AH
t
AHT
t
DS
t
DH
t
CEPH
t
OEPH
t
GHWL
t
CS
t
CH
t
WP
t
WPH
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high during toggle bit polling
Data Setup Time
Data Hold Time
CE# High during toggle bit polling
Output Enable High during toggle bit polling
Read Recovery Time Before Write (OE# High to WE# Low)
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Write Buffer Program Operation (Notes
2
,
3
)
Effective Write Buffer Program Operation (Notes
2
,
4
)
Accelerated Effective Write Buffer Program Operation
(Notes
2
,
4
)
Program Operation
(Note 2)
Accelerated Programming Operation
(Note 2)
Sector Erase Operation
(Note 2)
V
HH
Rise and Fall Time
(Note 1)
V
CC
Setup Time
(Note 1)
Erase/Program Valid to RY/BY# Delay
Command Cycle Timout
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
0
15
45
0
45
0
20
20
0
0
0
35
30
480
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
t
WLAX
t
DVWH
t
WHDX
t
GHWL
t
ELWL
t
WHEH
t
WLWH
t
WHDL
t
WHWH1
t
WHWH1
Per Word
Per Word
Typ
13.5
μs
Word
Word
Typ
Typ
Typ
Min
Min
Max
Max
60
54
0.5
250
35
90
50
μs
μs
sec
ns
μs
ns
μs
t
WHWH2
t
WHWH2
t
VHH
t
VCS
t
BUSY
t
SEA
相關(guān)PDF資料
PDF描述
S29GL01GP12TFI013 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12TFI020 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12TFI022 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12TFI023 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL01GP12TFI013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12TFI020 功能描述:閃存 1GB 2.7-3.6V 120ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL01GP12TFI020 制造商:Spansion 功能描述:Flash - NOR IC
S29GL01GP12TFI022 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12TFI023 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
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