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參數(shù)資料
| 型號： | S29GL01GP12TFI012 |
| 廠商： | Spansion Inc. |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 3.0伏只頁面模式閃存具有90納米MirrorBit工藝技術(shù) |
| 文件頁數(shù)： | 48/71頁 |
| 文件大小： | 990K |
| 代理商： | S29GL01GP12TFI012 |
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46
S29GL-P MirrorBit
TM
Flash Family
S29GL-P_00_A3 November21,2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Once the Secured Silicon Sector is locked and verified, the system must write the Exit Secured Silicon
Sector Region command sequence which return the device to the memory array at sector 0.
10.3
Secured Silicon Sector Entry/Exit Command Sequences
The system can access the Secured Silicon Sector region by issuing the three-cycle Enter Secured Silicon
Sector command sequence. The device continues to access the Secured Silicon Sector region until the
system issues the four-cycle Exit Secured Silicon Sector command sequence.
See Command Definition Table [Secured Silicon Sector Command Table, Appendix
Table 12.1 on page 61
through
Table 12.4 on page 65
for address and data requirements for both command
sequences.
The Secured Silicon Sector Entry Command allows the following commands to be executed
Read customer and factory Secured Silicon areas
Program the customer Secured Silicon Sector
After the system has written the Enter Secured Silicon Sector command sequence, it may read the Secured
Silicon Sector by using the addresses normally occupied by sector SA0 within the memory array. This mode
of operation continues until the system issues the Exit Secured Silicon Sector command sequence, or until
power is removed from the device.
Software Functions and Sample Code
The following are C functions and source code examples of using the Secured Silicon Sector Entry, Program,
and exit commands. Refer to the
Spansion Low Level Driver User’s Guide
(available soon on
www.spansion.com
) for general information on Spansion Flash memory software development guidelines.
Note
Base = Base Address.
/* Example: SecSi Sector Entry Command */
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */
*( (UINT16 *)base_addr + 0x555 ) = 0x0088; /* write Secsi Sector Entry Cmd */
Note
Base = Base Address.
/* Once in the SecSi Sector mode, you program */
/* words using the programming algorithm. */
Table 10.2
Secured Silicon Sector Entry
(LLD Function = lld_SecSiSectorEntryCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
Base + AAAh
Base + 555h
00AAh
Unlock Cycle 2
Write
Base + 555h
Base + 2AAh
0055h
Entry Cycle
Write
Base + AAAh
Base + 555h
0088h
Table 10.3
Secured Silicon Sector Program
(LLD Function = lld_ProgramCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
Base + AAAh
Base + 555h
00AAh
Unlock Cycle 2
Write
Base + 555h
Base + 2AAh
0055h
Program Setup
Write
Base + AAAh
Base + 555h
00A0h
Program
Write
Word Address
Word Address
Data Word
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PDF描述 |
|---|---|
| S29GL01GP12TFI013 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12TFI020 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12TFI022 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12TFI023 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12TFIV10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL01GP12TFI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12TFI020 | 功能描述:閃存 1GB 2.7-3.6V 120ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL01GP12TFI020 | 制造商:Spansion 功能描述:Flash - NOR IC |
| S29GL01GP12TFI022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12TFI023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
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